Compact Models for Future Generation CMOS by Darsen Duane Lu Doctor of Philosophy in Engineering — Electrical Engineeing and Computer Sciences University of California, Berkeley Professor Chenming Hu, Chair Multiple-gate MOSFETs with superior short channel control are expected to replace planar CMOS in the near future. An accurate and computationally efficient compact transistor model is necess...

Single Event Burnout (SEB) in power MOSFETs is of major concern with regard to the suitability of the MOSFET for space missions and other high particle radiation environments. Large efforts have been made to deeply understand this phenomenon, in order to develop power MOSFETs which are less sensitive to SEB [1], [2]. When an ion hits the MOSFET source, amplification of an inherent parasitic bip...

Capacitive sensing schemes are widely used for various microsensors; however, such microsensors suffer from severe parasitic capacitance problems. This paper presents a fully integrated low-noise readout circuit with automatic offset cancellation loop (AOCL) for capacitive microsensors. The output offsets of the capacitive sensing chain due to the parasitic capacitances and process variations a...

A nanopore is an analytical tool with single molecule sensitivity. For detection, a nanopore relies on the electrical signal that develops when a molecule translocates through it. However, the detection sensitivity can be adversely affected by noise and the frequency response. Here, we report measurements of the frequency and noise performance of nanopores </=8 nm in diameter in membranes compa...

High-frequency power converters need electromagnetic interferences filters using common and differential mode chokes with low parasitic capacitance to comply the compatibility standards. This article proposes a modeling method of this ways minimize it. The studied components are ring core inductors magnetic materials considered as perfect conductors or high permittivity, such nanocrystalline ma...

We present an integrated approach to modeling and control of electrostatically-actuated MEMS. The model consists of a set of fixed or movable electrodes, each coupled to the others through a resistor and capacitance, and to ground through a capacitance and a voltage or current source. This formulation incorporates movable structures, control electrodes, sense electrodes, and parasitic capacitan...

In this paper an attention is paid to the existence of parasitic elements in a typical n-channel MOSFET devices that are often employed in sub-THz detectors and the role they play in when such devices are employed at sub-THz frequencies. An effective circuit model of such a structure was constructed. The most of the effort was put to investigate the influence of the layout of the MOSFET’s Gate ...

Of crucial importance is to accurately simulate its switching characteristics for the application of SiC MOSFET. Due ultrafast capability, MOSFET dependent on interelectrode capacitances and extremely sensitive parasitics. Therefore, accurate modelling knowledge parasitics are required. Here, an improved model driven by empirical formula with three segments non-linear drain-to-gate capacitance ...

The increasing demand of low-cost, low-power and high-efficiency integrated systems is making more complex to design radio frequency (RF) analog circuits. Using multi-finger (MF) Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs) an attractive technique optimize the circuit performances. It reduces silicon area, gate resistance parasitic capacitances compared single finger MOSFE...

A planar volume dielectric barrier discharge (DBD) in pure carbon dioxide (CO2) for the formation of monoxide (CO) is examined by combined electrical and CO density measurements. The influence type electrode, material, thickness, gap on plasma power analyzed systematically. characterization means charge-voltage plots based simplest equivalent circuit model DBDs, extended so-called partial surfa...