the behavior of nanoscale energetic materials is quite different from micronsized energetic materials inmany ways. recently, some techniques such as sol-gel method, high speed air impaction and vacuum codeposition have been employed to obtain nanoscale energetic materials. however, only few attentionswere paid to nanoscale energetic materials because of the fabrication difficulty. in this paper...

Nowadays carbon nanoparticles are applied on the island of single electron transistor and Nano-transistors. The basis of single electron devices (SEDs) is controllable single electron transfer between small conducting islands. Based on the important points in quantum mechanics, when a wave passes through several spatial regions with different boundaries, the wave function of the first region di...

We investigate heat transport through an assembly consisting of a two-level system coupled between two harmonic oscillators, which is described by the quantum Rabi model, as prototype nanoscale devices using controllable multi-level systems. Using noninteracting-blip approximation (NIBA), we find that linear thermal conductance shows characteristic temperature dependence with two-peak structure...

Abstract Vertically stacked horizontal nanosheet gate-all-around transistors seem to be one of the viable solutions toward scaling down below sub-7nm technology nodes. In this work, we compare electrical performance, including variability studies several transistor structure optimization. We explore impacts width and thickness on performance outline important design guidelines necessary for ver...

The six articles in this special section provide a broad perspective on future computing paradigms based nanoelectronic technology. Nanoelectronics, as the word implies, is literally electronics at nanoscale, i.e., with characteristic feature sizes less than 50 nm. By most measures, semiconductor microelectronics industry today largest and successful example of nanoelectronics nanotechnology ge...

A major challenge in transistor technology scaling is the formation of controlled ultrashallow junctions with nanometer-scale thickness and high spatial uniformity. Monolayer doping (MLD) is an efficient method to form such nanoscale junctions, where the self-limiting nature of semiconductor surfaces is utilized to form adsorbed monolayers of dopant-containing molecules followed by rapid therma...

Transparent paper made of cellulose has attracted increased interest in the scientic community because it enables lighter, cheaper, more exible, and environmentally benign electronics of the future. The ability to modulate the dimension of cellulose bers in the nanoscale and microsized range by advanced processes enables paper to possess a tailored light scattering effect while maintaining h...

Abstract: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET) has a 3D core-shell nanotube structure with external and internal gatessurrounding the channel that employs el...