The properties of periodic pairs of mutually twisted metallic (silver) crosses separated by dielectric layer have been investigated by numerical simulation. The results show that the exceptionally strong polarization rotation and circular dichroism, negative permeability and negative refractive index are found at the infrared communication wavelength (1.55 microm).

Radiation-induced charge trapping has been studied in cured hydrogen silsesquioxane low dielectric constant films subjected to electric fields during the radiation process. Evidence is found for electric field-dependent negative charge trapping with a dose 47 variation. The possible origin of the negative charge trapping is discussed.

Measurement errors of a capacitive voltage transformer (CVT) are relevant to its equivalent parameters for which its capacitive divider contributes the most. In daily operation, dielectric aging, moisture, dielectric breakdown, etc., it will exert mixing effects on a capacitive divider’s insulation characteristics, leading to fluctuation in equivalent parameters which result in the measurement ...

This paper reports the unexpectedly strong effect of 4 wt% additional sorbed water on the electrical and dielectric properties (50 Hze2 MHz) of graphite oxide (GO) containing 18 wt% sorbed water. Water contents of 18 and 22 wt% (designated GO18 and GO22, respectively) are compared, with the former obtained by heating at 60 C (3 h) immediately before testing. The additional water increases the c...

Negative refractive index characteristics of a uniaxial anisotropic slab with a negative component of the permeability tensor are first confirmed. A two-dimensional array of metallic spirals is fabricated on a dielectric substrate and the wave propagation guided by the structure is measured by near-field measurements at 4.5 GHz band. The ω-β relation is obtained by the measured phase distributi...

In an electrostatic problem with nonuniform geometry, a charge Q in one region induces surface charges [called dielectric boundary charges (DBC)] at boundaries between different dielectrics. These induced surface charges, in return, exert a force [called dielectric boundary force (DBF)] on the charge Q that induced them. The DBF is often overlooked. It is not present in standard continuum theor...

We study nand pMOS devices with 3.2–30 nm thick SiON or SiO2 gate dielectrics and n ++ or p doped polysilicon gates to identify the type and energetic location of defects created through bias temperature stress. The results clearly indicate a dependence of the type of BTS induced defects on the stress polarity and the gate poly doping. If holes are provided from the p poly gate and the gate die...

The ubiquity of threshold voltage relaxation is demonstrated in samples with both conventional and high-k dielectrics following various stress conditions. A technique based on recording short traces of relaxation during each measurement phase of a standard measure-stress-measure sequence allows monitoring and correcting for the otherwise-unknown relaxation component. The properties of relaxatio...