Amodular particle–continuum numerical method is used to simulate steady-state hypersonic flow over a hollowcylinder-flare geometry. The resulting flowfield involves a mixture of rarefied nonequilibrium flow and high-density continuum flow. The hybrid particle–continuummethod loosely couples direct simulationMonte Carlo andNavier– Stokes methods, which operate in different regions, use different...

When a nonequilibrium growing interface in the presence of a wall is considered a nonequilibrium wetting transition may take place. This transition can be studied trough Langevin equations or discrete growth models. In the first case, the Kardar-Parisi-Zhang equation, which defines a very robust universality class for nonequilibrium moving interfaces, with a soft-wall potential is considered. W...

the thermal diffusion factor, at, for a binary gas mixture is calculated on the basis of nonequilibrium thermodynamics. a new formula for at is derived and this factor is given for several paris of gases according to this formula.

We present results of computer studies of the spatial correlations in two nonequilibrium model systems. These are lattice gases on 2' described by (apparently) nonGibbsian probability measures which are stationary with respect to simple, anisotropic, particleconserving stochastic dynamics. The translation-invariant pair correlation functions G(r) are found to decay like a quadrupole field, i.e....

The Brazilian incubation movement, despite having grown 25 percent in the last ten years, is going through a phase of stagnation due to lack of harmony between their structures and services to the new demands of society and the economic moment. Due to this fact, the Porto Digital Management Unit (NGPD), the institution responsible for the Porto Digital Technology Park governance in Recife – Bra...

A continuum field theory approach is presented for modeling elastic and plastic deformation, free surfaces, and multiple crystal orientations in nonequilibrium processing phenomena. Many basic properties of the model are calculated analytically, and numerical simulations are presented for a number of important applications including, epitaxial growth, material hardness, grain growth, reconstruc...

Experimental results relevant to models for nonequilibrium interface kinetics during rapid solidification are reviewed. Models are examined critically in light of these experiments. The kinetic Ising model is shown to compare unfavorably with experiment. The Continuous Growth Model without solute drag and its extension to non-(001) interfaces, the Aperiodic Stepwise Growth Model, account well f...

Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates is of high interest for both fundamental science and electronic device applications. To date, however, this material system remains relatively unexplored structurally and electronically, particularly at the atomic scale. To further understand the nature of the interface between graphene and Ge, we utilize u...