نتایج جستجو برای: optical comsol pin structure

تعداد نتایج: 1813165  

2001
K. Krishnamurthy R. Vetury Yet-zen Liu R. Pullela

An optical receiver for 40 Gbit=s communication systems with 8274 V=W conversion gain and 950 mVp–p limiting differential output is reported. A back-to-back sensitivity of 9.4 dBm at a bit error rate of 10 12 was observed for a 2 1 pseudorandom binary sequence. The receiver incorporates an InP based pin diode, a transimpedance amplifier and a limiting amplifier. This is the largest conversion g...

2009
Ciarán Hughes Edward Jones Martin Glavin Patrick Denny

The majority of computer vision applications assume that the camera adheres to the pin-hole camera model. However, most real optical systems will introduce some undesirable effects, rendering the assumption of the pin-hole camera model invalid. By far the most evident of these effects is radial distortion, particularly in fish-eye camera systems where the level of this distortion is relatively ...

2009
Berkehan Ciftcioglu Jie Zhang Lin Zhang John R. Marciante Jonathan D. Zuegel Roman Sobolewski Hui Wu

A new PIN photodiode (PD) structure with deep n-well (DNW) fabricated in an epitaxial substrate complementary metal–oxide–semiconductor (epi-CMOS) process is presented. The DNW buried inside the epitaxial layer intensifies the electric field deep inside the epi-layer significantly, and helps the electrons generated inside the epi-layer to drift faster to the cathode. Therefore, this new structu...

2015
M. Nour A. Lakhssassi E. Kengne M. Bougataya

Abstract: Due to the restriction of the number of probes that a patient can tolerate, and the inaccurate information provided by the invasive temperature measurements, which provide information only at discrete points, a mathematical model simulation is more effective to help doctors in planning their thermal treatment doses. This will maximize therapeutic effects while minimizing side effects....

Journal: :Journal of The European Ceramic Society 2021

Direct writing is a unique means to align anisotropic particles for the fabrication of textured ceramics by templated grain growth (TGG). We show that alignment tabular barium titanate (BT) template (20–40 ?m width and 0.5–2 thickness) in PIN-PMN-PT matrix powder (d50 = 280 nm) significantly improved during direct using nozzles at high printing rates. The particle orientation distribution as-pr...

Journal: :Metals 2022

This work is aimed at studying the tribological contact between a titanium–aluminum–vanadium alloy pin (Ti6Al4V), produced by Electron Beam Melting (EBM), and sheet of ultra high molecular weight polyethylene (UHMWPE), which are widely utilized materials for prosthetic applications. Using “pin on disc” system, tribometric tests different duration (up to 240 min) were carried out in order trace ...

2013
Denis Menshykau Srivathsan Adivarahan Philipp Germann Lisa Lermuzeaux Dagmar Iber

Morphogenesis is a tightly regulated process that has been studied for decades. We are developing data-based and image-basd mechanistic models for a range of developmental processes with a view to integrate the available knowledge and to better understand the underlying regulatory logic. In our previous papers on simulating organogenesis with COMSOL (German et al COMSOL Conf Procedings 2011; Me...

Journal: :amirkabir international journal of electrical & electronics engineering 2013
a. anbaran a. mohammadi a. abdipour

this paper proposes a new smart antenna beamforming scheme based on electronically steerable parasitic array radiator (espar). the proposed method is capable of providing better capacity compared to the conventional espar. the termination of each antenna element in this structure comprises a pin diode in addition to a varactor. using pin diode besides the varactor provides more degrees of freed...

2012
T. Boles J. Brogle D. Hoag D. Carlson

This paper describes the development of a heterojunction AlGaAs/GaAs PIN diode as a revolutionary improvement as compared to the homojunction GaAs PIN diode commonly used in microwave systems for commercial and military applications. In a heterojunction device the injected carriers from the junction are confined by the bandgap discontinuity between the AlGaAs/GaAs layers. This confinement effec...

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