The main characteristics of intrinsic photoconductivity and the spectra negative induced by impurity photoconductivity, infrared quenching in doped REE (gadolinium dysprosium) at N = 0−10−1 at%, p-GaSe single crystals are experimentally investigated. It is shown that instability irreproducibility photoelectric this semiconductor due to fluctuations electronic potential associated with presence ...

Graphene nanoribbons functionalized with methoxy groups were synthesized. Theoretical studies predicted reduced bandgap and effective mass of charge carriers. THz spectroscopy revealed ∼25% enhancement the photoconductivity.

A numerical solution for the transient photoconductivity in the laser-activated bulk semi-insulating GaAs switch has been obtained, in which the influence of EL2 and other traps on the optical generation rates and the recombination rates of free carriers has been determined. Calculated photocurrent pulses are compared with the experimental results of switching measurements under conditions of l...

Persistent photoconductivity ~PPC! and optical quenching ~OQ! of photoconductivity ~PC! were investigated in a variety of n-GaN layers characterized by different carrier concentrations, luminescence characteristics, and strains. The relation between PPC and OQ of PC was studied by exciting the samples with two beams of monochromatic radiation of various wavelengths and intensities. The PPC was ...

The exciton binding energy (E(b)) and the band gap energy (E(g)) of poly(phenylene vinylene) are determined by high-resolution measurements of the photoconductivity excitation profile as a function of light polarization, applied electric field, and temperature. At high applied electric fields, a peak in the photoconductivity is observed when the sample is pumped at a photon energy just below th...

The phenomenon of persistent photoconductivity is elusive and has not been addressed to an extent to attract attention both in micro and nanoscale devices due to unavailability of clear material systems and device configurations capable of providing comprehensive information. In this work, we have employed a nanostructured (nanowire diameter 30-65 nm and 5 μm in length) ZnO-based metal-semicond...

Photoconductive properties of SrBi2Ta2O9 thin ®lms in the 250±400 nm wavelength range were investigated. The ®lms were deposited on Pt/SiO2/Si substrates using the Chemical Solution Deposition and were crystallized by conventional thermal annealing at 850 C. One sensitivity maximum was observed in the spectral distribution of the photoconductive signal and was attributed to band-to-band generat...

The main objective of the research was to identify semiconducting characteristics mature medium-thick (diameter 14, 15 µm) "Xorazm-150" cotton fibers both undoped and doped with 1.5% aqueous solution KMnO4, including current versus voltage temperature dependence, dependence electrical conductivity, influence doping time on photoconductivity. conducted in range (296-360 K) (0-100 V). infrared sp...