 Silicon Photonic Integrated Devices For Optical Interconnects Di Liang, Géza Kurczveil, Chin-Hui Chen, Marco Fiorentino, Zhen Peng, Raymond G. Beausoleil HP Laboratories HPL-2013-56 Optical interconnects; Integrated optoelectronic circuits We present our latest update on key components in the integrated Si photonic interconnect system, including hybrid Si microring lasers, Si microring modula...

Abstract—The Spatially Modulated Light CMOS detector (SML CMOS detector) removes the slow part of the current response of a traditional CMOS photodetector, by using the difference between the signals of an immediate and a deferred detector. This slow part of the current response limits the maximum frequency of a photodetector in the conventional CMOS technology to a few MHz. Experimental eviden...

The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN e...

Nanowire networks of zinc octaethylporphyrin (ZnOEP) were printed using an aerosol-jet printer on a poly(ethylene terephthalate) (PET) flexible substrate. The prototype photodetector based on the as-printed network exhibited high photosensitivity, fast photoresponse, and excellent mechanical stability.

The detection of light helicity is key for various applications, from drug production to optical communications. However, the direct measurement inherently impossible with conventional photodetectors based on III–V or IV–VI non-chiral semiconductors. prior polarization analysis by often moving elements necessary before sent detector. A method here presented effectively give dilute nitride GaAs-...