Carbon nanoribbons (CNRs) have been recently experimentally and theoretically investigated for different device applications due to their unique electronic properties. In this work, we present a theoretical study of the electronic structure, e.g. bandgap and density of states, of armchair carbon nanoribbons, using both, simple analytical solutions and numerical solutions based on a πorbital tig...

We present a comprehensive computational toolset for low-field mobility modeling in nano-scaled SOI channels. The dimension-independent methodology allows us to treat planar devices (MOS, UTB) and non-planar ones (Bulk/SOI-FinFET, Nanowire-FET) on equal footing. The method involves combining a selfconsistent Schrödinger-Poisson solution in the channel cross-section with a linearized Boltzmann t...

We have observed resonant coherent excitation (RCE) of H-like Ar(17+) ions traveling through a 1 microm-thick Si crystal at an energy of 391 MeV/u in the nonchanneling condition. A three-dimensional periodic array of atomic planes induces RCE of the nonchanneling ions. The high energy heavy ions together with the thin crystal allow us to observe this new RCE through the measurements of the char...

Novel metal oxide semiconductor field effect transistor (MOSFET) architectures aimed at sub IV operation with enhanced current driving capability are reported. In our design, the planar channel region in a conventional MOSFET is replaced by an array of isolated Si wires. Directional metal coverage of the two sidewalls and the top surface of each Si wire help achieve enhanced gate control. Sub I...

The title compound, C(13)H(20)O(4)Si(2), is a siloxane-functionalized norbornane anhydride. Both five-membered heterocyclic rings of the mol-ecule have a planar structure, whereas the two five-membered aliphatic rings assume envelope conformations. Weak inter-molecular C-H⋯O hydrogen bonding is present in the crystal structure.

nano-crystalline Si dots of dimensions of 8nm have been incorporated into a variety of Coulomb blockade and floating gate memory devices. Structures include vertical transistor, planar electrode, nanoscale channel junction and 2-gate trench structure. Ballistic transport, Coulomb oscillation and memory effects are clearly demonstrated

In the title mol-ecule, [Fe(2)(C(5)H(5))(2)(C(17)H(16)Si)], the cyclo-penta-dienyl rings linked to the same Fe atom are approximately eclipsed and the inter-planar angles are 1.8 (2) and 3.4 (2)°. The Fe atom is slightly closer to the substituted cyclo-penta-dienyl ring.

We have achieved significant accomplishments on the developing of high-efficiency thin film multi-junction solar cell with nano-scale light management. The highlights include: (1) Developed a computational tool for the detailed balance analysis of nanophotonic structures showing that absorption in a solar cell at all angles is sufficient to calculate and understand the fundamental behavior of n...

We present experimental evidence of a transverse thermopower, or planar Nernst effect, in ferromagnetic metal thin films driven by thermal gradients applied in the plane of the films. Samples of 20 nm thick Ni and Ni(80)Fe(20) were deposited on 500 nm thick suspended Si-N thermal isolation platforms with integrated platinum strips designed originally to allow measurement of thermally generated ...

7 Given k pairs of terminals {(s1, t1), . . . , (sk, tk)} in a graph G, the min-sum k vertex-disjoint 8 paths problem is to find a collection {Q1, Q2, . . . , Qk} of vertex-disjoint paths with minimum 9 total length, where Qi is an si-to-ti path between si and ti. We consider the problem in 10 planar graphs, where little is known about computational tractability, even in restricted cases. 11 Ko...