نتایج جستجو برای: plasma enhanced atomic layer deposition
تعداد نتایج: 1089423 فیلتر نتایج به سال:
• Thin ZnO films can be grown at low temperatures using the PE-ALD method The photocatalytic activity of thin is strongly enhanced show a significantly higher excitation rate in UV spectral region degree crystallinity lower contain high concentration zinc vacancies In this work, we present large, tenfold enhancement by plasma-enhanced atomic layer deposition (PE-ALD) 100 °C, compared to values ...
A comparative study of DC, RF and VHF excitation for the plasma enhanced chemical vapor deposition (PECVD) of intrinsic layers of a-Si:H is presented, with special emphasis on the effects of hydrogen dilution. Growth rates at comparable plasma power, for substrate temperatures between 100°C and 300°C and for various H2 dilution ratios are presented, along with optical bandgap, H content, and el...
Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is pr...
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