نتایج جستجو برای: pulsed power technology
تعداد نتایج: 946931 فیلتر نتایج به سال:
Purpose of the work High voltage power switching AlGaN/GaN HFETs are gaining considerable interest for future highly efficient power electronic applications. Due to its lower cost and production line compatibility, GaN-on-Silicon approaches are most attractive for industrial implementation. On the other hand, the Si substrate has a three times lower thermal conductivity as compared to the SiC s...
The Electra advanced pulsed power development program has the goal of developing and demonstrating pulsed power technology that is applicable for KrF (krypton fluoride) Laser IFE (inertial fusion energy). The application presents efficiency, lifetime and cost challenges that mandate the use of advanced pulse compression topologies. In turn, these advanced topologies require the development of c...
background : the aim of this study was to investigate the effect of pulsed ultra-violet (uv) irradiation on inactivation of beer spoilage microorganisms. uv irradiation is nowadays cost effective enough to compete with traditional biological, physical, and chemical treatment technologies and has become an alternative to such methods. material and methods : photoinactivation effects of pulsed uv...
Modulated pulse power MPP technology is a derivative of high power pulsed magnetron sputtering that allows unprecedented user control over the growth process, although the critical time-dependent plasma properties during the power pulse have not been studied until now. Using a MPP plasma generator, pulses of custom voltage waveforms were generated and applied to the cathode of a 36 cm diameter ...
0.2-mu m AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Al2O3 Passivation
We report a successful application of atomic layer deposition (ALD) aluminum oxide as a passivation layer to gallium nitride high electron-mobility transistors (HEMTs). This new passivation process results in 8%–10% higher dc maximum drain current and maximum extrinsic transconductance, about one order of magnitude lower drain current in the subthreshold region, 10%–20% higher pulsed-I V drain ...
An explicit pulsed double edge triggered sense amplifier flip-flop for the low power and low delay is presented in this paper. The redundant transitions are eliminated by using the conditional technique named conditional discharge technique. By using the fast improved version of the nickolic latch along with the sense amplifier approach for the latching and the sensing stage the delay factor of...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید