Resistive Switching The resistive switching in a metal–insulator–metal may be explained through the formation and rupture of metallic filaments. random circuit breaker model is simulation tool that gives real-time distribution filaments lattice network breakers. In article 2200730, Catarina Dias João Ventura show dependences forming, Set Reset voltages on thickness defect percentage, compare wi...

Resistive random access memory (RRAM) characteristics using a new Cr/GdOx/TiN structure with different device sizes ranging from 0.4 × 0.4 to 8 × 8 μm(2) have been reported in this study. Polycrystalline GdOx film with a thickness of 17 nm and a small via-hole size of 0.4 μm are observed by a transmission electron microscope (TEM) image. All elements and GdOx film are confirmed by energy disper...

In contrast to the irreversible transition of resistive switching induced by oxygen-vacancy filaments (VF) and metal filaments (MF) reported in the literature, this study reports coexistence and completely reversible transition of VF-and MF-induced resistive switching in a Ni/HfO 2 /SiO x /p +-Si device with three distinct and stable resistance states. In a dual filament model proposed, VF and ...

Solution-based metal oxide thin films allow the achievement of ultralow-power and high-density resistive-switching (RS) devices by using low-cost simple processes being compatible with large-area manufacturing. By controlling key parameters synthesis categorized in article number 2004328 Emanuel Carlos, Asal Kiazadeh, Elvira Fortunato, co-workers, performance solution-based RS is enhanced to be...

Resistive switching (RS) based on the formation and rupture of conductive filament (CF) is promising in novel memory and logic device applications. Understanding the physics of RS and the nature of CF is of utmost importance to control the performance, variability and reliability of resistive switching memory (RRAM). Here, the RESET switching of HfO2-based RRAM was statistically investigated in...

We apply a three-dimensional (3D) physical simulator, coupling self-consistently stochastic kinetic Monte Carlo descriptions of ion and electron transport, to investigate switching in silicon-rich silica (SiOx) redox-based resistive random-access memory (RRAM) devices. We explain the intrinsic nature of resistance switching of the SiOx layer, and demonstrate the impact of self-heating effects a...

A major challenge of resistive switching memory (resistive random access memory (RRAM)) for future application is how to reduce the fluctuation of the resistive switching parameters. In this letter, with a statistical methodology, we have systematically analyzed the reset statistics of the conductive bridge random access memory (CBRAM) with a Cu/HfO2/Pt structure which displays bipolar switchin...

We report a study of resistive switching in a silicon-based memristor/resistive RAM (RRAM) device in which the active layer is silicon-rich silica. The resistive switching phenomenon is an intrinsic property of the silicon-rich oxide layer and does not depend on the diffusion of metallic ions to form conductive paths. In contrast to other work in the literature, switching occurs in ambient cond...