there are several techniques in use for non-linear refractive index measurement, namely, interferometric techniques, in which conventional inter-ferometers are used, degenerate for wave mixing (dfwm), and z-scan, each of these techniques suffers from some shortcmings. for example conventional interferometers like fabry-perot and twyman-green need high quality optical components, unwanted reflec...

In this paper, we solve numerically a semiconductor device energy balance equation using monotone iterative method. With the proposed solution technique, we prove the solution of ̄nite volume discretized semiconductor device energy balance equation converges monotonically. The method presented here provides an e± cient approach for the numerical solution of energy balance equation in submicron ...

A thin-film transistor: An n-type polymer semiconductor, poly(2,3-bis(perfluorohexyl)thieno[3,4-b]pyrazine), was synthesized through a Pd-catalyzed polycondensation employing a perfluorinated multiphase solvent system. This is the first example of an n-type polymer semiconductor with exclusive solubility in fluorinated solvents. The fabrication of organic field effect transistors containing thi...

A new concept of Open Architecture Automated Test Equipment (ATE) is being discussed hotly in the semiconductor industry in terms of new hardware and software architectures. This paper presents Open Architecture Software for OPENSTARTM — the Open Semiconductor Test Architecture that is being defined by the Semiconductor Test Consortium. The software architecture and related components of the so...

Design and construction of a stable current supply with protection circuits are described. The reported circuit provides a high-stable and high-level current variable from 0.5-1.2 A with the protect ion circuits to prevent over load current, voltage and off-range temperature operation. A detailed analysis of the circuit parameters is given and the time behaviors of the load voltage/current and ...

In this study, spectroscopic properties of the single-walled boron-nitride nanotube (SWBNNT) –a semiconductor channel in molecular diodes and molecular transistors–have been investigated under field-free and various applied electric fields by first principle methods.Our analysis shows that increasing the electric field in boron-nitride nanotube (BNNT) decreases the Highest Occupied Crystal Orbi...

The Mg(BiO2)2 is the orthorhombic crystal system acting as semiconductor in electric devices. To evaluate electronic band structures, the total density of state (TDOS) and the partial density of state (PDOS), Generalized Gradient Approximation (GGA) based on the Perdew–Burke–Ernzerhof (PBE0) was used for Mg(BiO2)2. The band gap was recorded at 0.959 eV, which is supported by a good semiconducto...

In most of today solar cells the absorption of photons, which results in the generation of the charge carriers, and the subsequent separation of the photo-generated charge carriers take place in semiconductor materials. Therefore, the semiconductor layers are the most important parts of a solar cell; they form the hart of the solar cell. There are a number of different semiconductor materials t...