We propose a new integrated device for spintronics application, which is based on a hybrid metal-semiconductor structure. The device consists of a Si-based p-i-n photodetector sandwiched between two layers of a ferromagnetic metal (3d ferromagnet or half-metallic compound). The photocurrent flowing in such a system is shown to depend on its magnetic configuration. This, in turn, allows controll...

A paper published in 1996 examined the problems involved in truly deleting data from magnetic storage media and also made a mention of the fact that similar problems affect data held in semiconductor memory. This work extends the brief coverage of this area given in the earlier paper by providing the technical background information necessary to understand remanence issues in semiconductor devi...

Recent advances in development of semiconductor devices lead to more and more complex device structures. This concerns device geometry as well as tne combination of different materials. Due to the rapid reduction of device geometries, the models describing the device physics increase in complexity. 10 gain additional insight into the performance of devices under realistic dynamic boundary condi...

In this presented paper, to accomplish semiconductor device synthesis for TCAD application, the Parallel Genetic Algorithm is applied as the core searching algorithm for “acceptability region” of device designables, which satisfy the designed device performance. The results of some experiments on FIBMOS are shown, which indicate the Parallel Genetic Algorithm is an efficient and fast searching ...

Novel ultrafast semiconductor lasers Ursula Keller ETH Zürich SESAM modelocked VECSELs and MIXSELs are attractive semiconductor laser sources that deliver ultrashort laser pulses with picosecond and femtosecond pulse durations in combination with watt-level average output power levels in the gigahertz repetition rate range. The excellent beam quality and low-noise performance makes them highly ...

Noise (a spontaneous fluctuation in current or in voltage) is generated in all semiconductor devices. The intensity of these fluctuations depends on device type, its manufacturing process, and operating conditions. The resulted noise, as a superposition of different noise sources, is defined as an inherent noise. The equivalent noise models (containing all noise sources) are created for a parti...

Preparation and structural analysis of highly ordered single crystalline wires of a diketopyrrolopyrrole (DPP) molecular semiconductor grown through a solution process are reported, and the static/dynamic electrical response of an organic electronic device using the DPP semiconductor has been analyzed.

Semiconductor manufacturing process variations are worsening with continued reduction in transistor feature sizes. However, technology scaling is the engine driving the semiconductor industry and must continue. When variations worsen to the point that they can no longer be addressed solely at the device and circuit levels, the next logical step is to develop variation-tolerant