Drastic cost reduction of phased-arrays will require a shift in design strategy. The emphasis must be on removing expensive active components, not developing more highly integrated components or exotic packaging techniques. The phase shifter circuit—an essential active component—is the primary obstacle in decreasing the cost and number of active components in a phased-array. The problem is mult...

We demonstrate that subwavelength scatterers can couple sunlight into guided modes in thin film Si and GaAs plasmonic solar cells whose back interface is coated with a corrugated metal film. Using numerical simulations, we find that incoupling of sunlight is remarkably insensitive to incident angle, and that the spectral features of the coupling efficiency originate from several different reson...

Thin Al2O3 films are grown and in situ doped with erbium by pulsed laser deposition in a single step process, by alternate ablation from Al2O3 and Er targets. The as-deposited films have an Er step dopant profile throughout the film thickness, whose concentration depends on the number of pulses at the Er target. The as-grown films are optically active, as evidenced by the photoluminescence spec...

For ultrathin films of a given material, light absorption is proportional to the film thickness. However, if the optical constants of the film are chosen in an optimal way, light absorption can be high even for extremely thin films and optical path length. We derive the optimal conditions and show how the maximized absorptance depends on film thickness. It is then shown that the optimal situati...

We have successfully designed the geometry of the microwave cavity and the thin metal electrode, achieving resonance of the microwave cavity with the metal-insulator-semiconductor (MIS) device structure. This very simple MIS device operates in the cavity, where charge carriers are injected quantitatively by an applied bias at the insulator-semiconductor interface. The local motion of the charge...

Solution-processed gate dielectrics were fabricated with the combined ZrO2 and Al2O3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage propertie...