Scorpion venom toxicity is one of the major medical concerns from old years, due to its influence on human activities and health. From many years ago a lot of researches established to examine different aspects of venom toxicity and its effects on different organs. During these years researchers are doing more specific studies on the cytotoxicity of scorpion venom. In Iran, Odonthobuthus doriae...

This paper investigates the short channel effects (SCE) of recently proposed Singular Point Source MOS (S-MOS) SiC MOSFET. The study was carried out using 2D and 3D TCAD simulations for a planar, trench S-MOS 1200V MOSFETs IV output characteristics up to under circuit transient conditions. device shows no SCE rated voltage when compared reference planar devices which exhibit strong SCE. is due ...

Total-ionizing-dose (TID) mechanisms are evaluated in 16 nm Si bulk FinFETs at doses up to 1 Grad(SiO2) for applications high-energy physics experiments. The TID effects through DC and low-frequency noise measurements by varying irradiation bias conditions, transistor channel lengths, fin/finger layouts. response of nFinFETs irradiated under positive gate ultrahigh shows a rebound threshold vol...

We present analytical physics-based compact models for the Schottky barriers at interfaces between organic semiconductor and source drain contacts in thin-film transistors (TFTs) fabricated coplanar staggered device architecture, we illustrate effect of these on current-voltage characteristics TFTs. The model barrier explicitly considers field-dependent lowering due to image charges. Potential ...

The upcoming sixth generation (6G) of wireless communication systems is expected to enable a wide range new applications in vehicular communication. However, the use multicarrier-based modulation introduces challenges due Doppler effects, which can induce nonlinear distortions at high-power amplifiers (HPAs) and significantly degrade channel estimation. In this paper, we investigate performance...

Deep submicron strained-Si n-MOSFET’s were fabricated on strained Si/relaxed Si0 8Ge0 2 heterostructures. Epitaxial layer structures were designed to yield well-matched channel doping profiles after processing, allowing comparison of strained and unstrained Si surface channel devices. In spite of the high substrate doping and high vertical fields, the MOSFET mobility of the strained-Si devices ...