The theories Si1(α) and T i 1(α) are the analogues of Buss’ relativized bounded arithmetic theories in the language where every term is bounded by a polynomial, and thus all definable functions grow linearly in length. For every i, a Σbi+1(α)-formula TOP (a), which expresses a form of the total ordering principle, is exhibited that is provable in S 1 (α), but unprovable in Ti1(α). This is in co...

Algorithms are constructed which, when an explicit presentation of a finitely generated metabelian group G in the variety si1 is given, produce unitary presentations for the derived subgroup G', the centre Z{G), the Fitting subgroup Fit(G), and the Frattini subgroup <p(G). Additional algorithms of independent interest are developed for commutative algebra which construct the associated set of p...

By combining Raman scattering from the cleaved edge and under hydrostatic pressure, we have accurately determined the tetragonal phonon deformation potentials of strained Si1−xGex alloys in the entire compositional range for the Ge-like, Si-like, and mixed Si–Ge optical modes. A known biaxial strain is induced on thin alloy layers by pseudomorphic epitaxial growth on silicon and subsequent capp...

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Full-band Monte Carlo simulations are performed to study the properties of hole transport in bulk Germanium under general strain conditions. The band structures are calculated with the empirical non-local pseudopotential method. For Monte Carlo simulations acoustic and optical phonon scattering as well as impact ionization are taken into account. Results for biaxially strained Ge grown on a [00...

We study the structural, dynamical, and electronic properties of amorphous Si1−xGex :H alloys using firstprinciples local basis molecular dynamics techniques. The network topology and defects in the amorphous network have been analyzed. Structural changes, particularly an increase in number of defects and strained bond angles, have been found as the Ge content increases from x=0.1 to 0.5. The e...

We report on the basis of Cu-NQR measurements that superconductivity (SC) and antiferromagnetism (AF) coexist on a microscopic level in CeCu2(Si1−xGex)2, once a tiny amount of 1%Ge (x = 0.01) is substituted for Si. This coexistence arises because Ge substitution expands the unit-cell volume in nearly homogeneous CeCu2Si2 where the SC coexists with slowly fluctuating magnetic waves. We propose t...

In this paper, we mainly present a new simple, efficient and nondestructive Raman scattering analysis method to study the distribution of strain in SiGe alloy films. The method can simultaneously determine both Ge fractional composition x and strain of SiGe films. We use the Ar+ laser lines (514.5, 488 and 457.9 nm) to detect the information of different depth of SiGe layers. The results show t...

Funding support for this research was provided by the Natural Sciences and Engineering Research Council of Canada (NSERC), the Pacific Institute for Climate Solutions (PICS), the Canadian Association for Energy Economics (CAEE Graduate Scholarship), Simon Fraser University, Natural Resources Canada, and Environment Canada. We wish to thank Bill Tubbs, Suzanne Goldberg, and Adam Baylin-Stern for...