In this study, undoped and Ti-doped ZnO thin films grown by SILAR (Successive Ionic Layer Adsorption Reaction) method were investigated using XRD, SEM, linear absorbance electrical characterization. The effect of doping ratio was determined changing Ti ratios from 0.05 to 0.20. addition, the with same additive annealed at 300°C for 15 minutes in nitrogen environment. Thus, effects both annealin...