We report the formation of silicide by annealing a SiOx surface, with low coverage Eu doped Gd2O3 nanoparticles. The temperature required for removal native oxide from Si substrate decreases close to 200 °C in presence X-ray photoemission electron microscopy, low-energy microscopy and mirror are used monitor removal. Fragmentation nanoparticles is observed, layer gradually removed. migrates cle...

Nickel silicides are widely used in making electrical contact to complementary metal-oxidesemiconductor (CMOS) devices in advanced integrated circuits. They have been the preferred contacting material since the 2006 “65 nm technology node”, partly because a self-aligned-silicide (“SALICIDE” [1]) process is available. However, their high temperature behaviour is complex and, crucially, improved ...

We have investigated the nanostructure and microstructure resulting from simultaneous ns laser irradiation with deposition of Co films on Si(001) substrates. The spatial order and length scales of the resulting nanopatterns and their crystalline microstructure were investigated as a function of film thickness h and laser energy density E using a combination of atomic force, scanning electron an...

In this work ultrathin iron silicide epilayers were obtained by the reaction of iron contaminants with the Si(1 1 1) substrate atoms during high-temperature flash. After repeated flashing at about 1125 C, reflection high-energy electron diffraction indicated silicide formation. Scanning tunneling microscopy revealed highly ordered surface superstructure interrupted, however, by a number of exte...