The goals of this work were to synthesize stoichiometric silicon carbon nitride (Si1.5C1.5N4) films using the RF-PECVD method and to characterize the deposited material. Gas mixtures, as opposed to an organic monomer, were chosen for reactants. Gas mixtures allow for varying the concentration of the elements needed for silicon carbon nitride synthesis and thereby optimizing the composition of t...

A large amount of silicon debris particles are generated during the slicing of silicon ingots into thin wafers for the fabrication of integrated-circuit chips and solar cells. This results in a significant loss of valuable materials at about 40% of the mass of ingots. In addition, a hazardous silicon sludge waste is produced containing largely debris of silicon, and silicon carbide, which is a ...

Wide band-gap semiconductors are most attractive as materials for power devices due to low losses, improved temperature capability and high thermal conductivity. Although silicon carbide Schottky diodes have been commercially available on the market for years, an active wide bandgap switch is still missing. Probably the best performance of upcoming devices is gained with normally-on concepts su...

With the advancement in molecular biology, several metabolic and physiological processes have been elucidated at molecular levels discovering the involvement of different genes. Since the advent of plant transformation 33 years ago, use of plant transformation techniques sparked an interest in fundamental and applied research leading to the development of biological and physical methods of fore...

Title of dissertation: ELECTRON TRANSPORT SIMULATIONS AND BAND STRUCTURE CALCULATIONS OF NEW MATERIALS FOR ELECTRONICS: SILICON CARBIDE AND CARBON NANOTUBES. Gary Pennington, Doctor of Philosophy, 2003 Dissertation directed by: Professor Neil Goldsman Department of Electrical Engineering Silicon carbide (SiC) and carbon nanotubes (CNTs) are two materials which have promising potential in electr...

Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals Role of oxygen on microstructure and thermoelectric properties of silicon nanocomposites Spectrally and temporarily resolved luminescence study of short-range order in nanostructured amorphous ZrO2 Characterization of luminescent silicon carbide nanocrystals prepared by reactive bonding and subsequent wet chemica...

The high carrier mobility of graphene has been exploited in field-effect transistors that operate at high frequencies. Transistors were fabricated on epitaxial graphene synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff frequency of 100 gigahertz for a gate length of 240 nanometers. The high-frequency performance of these epitaxial graphene transistors exceeds that o...

Articles you may be interested in Photoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films Amorphous silicon thin-film transistors with field-effect mobilities of 2 cm 2 / V s for electrons and 0.1 cm 2 / V s for holes Appl. Optical study of disorder and defects in hydrogenated amorphous silicon carbon alloys Appl. Effect o...

Cubic silicon carbide (SiC) is an extremely hard and brittle material having unique blend of material properties which makes it suitable candidate for microelectromechanical systems and nanoelectromechanical systems applications. Although, SiC can be machined in ductile regime at nanoscale through single-point diamond turning process, the root cause of the ductile response of SiC has not been u...