Silicon dioxide (SiO2) has played a critical role in the development of high-efficiency silicon (Si)-based photovoltaic devices. Recently, it experienced renaissance as an interlayer many new contact passivating structures. Studies have extensively investigated recombination process at Si–SiO2 interface, however, only little is known about impact temperature on surface recombination. In this st...

This paper reports a novel fabrication process to develop planarized isolated islands of benzocyclobutene (BCB) polymer embedded in a silicon substrate. Embedded BCB in silicon (EBiS) can be used as an alternative to silicon dioxide in fabrication of electrostatic micromotors, microgenerators, and other microelectromechanical devices. EBiS takes advantage of the low dielectric constant and ther...

In the present work, thermochemical water splitting with siliconized silicon carbide (SiSiC) honeycombs coated with a zinc ferrite redox material was investigated. The small scale coated monoliths were tested in a laboratory test-rig and characterized by X-ray diffractometry (XRD) and Scanning Electron Microscopy (SEM) with corresponding micro analysis after testing in order to characterize the...

Recently, however, copper has been introduced for interconnect conductivity, replacing aluminum alloys. A variety of low-dielectric constant materials are being introduced to reduce parasitic capacitance, replacing silicon dioxide. As dimensions continue to shrink, the traditional silicon dioxide gate dielectric thickness has been reduced to the point where tunneling current has become signifi ...

Silicon electronics dominates information processing, and offers a remarkable technology for making very complex systems for very little cost. Many of the waveguide passive optical components that we use today in telecommunications, such as wavelength splitters, use the same technology base – the silicon, silicon dioxide and silicon nitride that are the semiconductors and insulators of electron...