Optical data communication is not the only area where silicon photonics will have an impact. Silicon and related group 4 crystals have excellent linear and nonlinear optical properties in the midwave and longwave infrared spectrum [1-6]. These properties, along with silicon’s excellent thermal conductivity and optical damage threshold, open up the possibility for a new class of midwave and long...

Synchrotron-based X-ray microbeam measurements were performed on silicon-on-insulator (SOI) features strained by adjacent shallow-trench-isolation (STI). Strain engineering in microelectronic technology represents an important aspect of the enhancement in complementary metal-oxide semiconductor (CMOS) device performance. Because of the complexity of the composite geometry associated with microe...

Silicon substrate losses and non-linearities were the limiting characteristics of Si-based MOSFET technologies to provide low-power and low-cost solutions to the mobile RF device market. Thanks to the trap-rich Silicon-on-Insulator (SOI) substrate invented at UCL and developed in collaboration with the French company SOITEC, RF SOI is becoming a mainstream technology which is implemented in all...

1. Introduction Silicon-on-insulator (SO1) structures implanted with 200 or 400 keV N ÷ ions at a dose of 7.5×1017cm 2 were studied by spectroscopic ellipsometry (SE). The SE measurements were carried out in the 300-700 nm wavelength (4.13-1.78 eV photon energy) range. The SE data were analysed by the conventional method of using appropriate optical models" and linear regression analysis. We ap...

Bonded silicon-on-insulator (SOI) wafers have the capability of realizing monolithic pixel devices, where the silicon resistivity is optimized separately for the electronics and detector parts. Using UNIBOND wafers, we are developing monolithic pixel devices fabricated with OKI Semiconductor 0.20 mm FD-SOI technology. A set of PMOS and NMOS transistors were irradiated with protons in order to i...

Body Bias (BB) control on Silicon On Insulator (SOI) mitigates power consumption on the stand-by mode. However, Negative Bias Temperature Instability (NBTI) changes by BB. We measure the NBTI of ring oscillators on thin buried oxide (BOX) fully-depleted SOI process. NBTI is suppressed and power consumption becomes lower by applying Reverse BB (RBB) because larger threshold voltage decreases car...

This paper reviews the recent advances of silicon-on-insulator (SOI) technology for complementary metal–oxide–semiconductor (CMOS) very-large-scale-integration memory and logic applications. Static random access memories (SRAM’s), dynamic random access memories (DRAM’s), and digital CMOS logic circuits are considered. Particular emphases are placed on the design issues and advantages resulting ...

As Silicon-On-Insulator (SOI) rapidly advances to the vanguard of ULSI technology, compact model parameter extraction for SOI still relies on indirect methods. Floating body (FB) device parameter extraction is currently based on body contact (BC) device parameter extraction. However, the underlying physics of these two devices is quite different, and therefore, have distinctively different char...

The novel characteristics of a new lateral PNM Schottky collector bipolar transistor (SCBT) on silicon-on-insulator (SOI) are explored using two-dimensional (2-D) simulation. The collector-base junction of the proposed lateral PNM transistor consists of a Schottky junction between n-base (N) and metal (M). The characteristics of this structure are compared with that of lateral PNP transistors o...

OVERVIEW: There is an increased demand for the production of nextgeneration super-high-speed and low-power-consumption CMOS (complementary metal-oxide semiconductor) devices using SOI (silicon on insulator). Major global device manufacturers are actively commercializing this product. In SOI technology, a device is fabricated in a silicon layer (SOI layer) formed on a BOX (buried oxide) film. Al...