Inexpensive high-resolution silicon (Si) X-ray detectors are required for on-site surveys of traces of hazardous elements in food and soil by measuring the energies and counts of X-ray fluorescence photons radially emitted from these elements. Gated silicon drift detectors (GSDDs) are much cheaper to fabricate than commercial silicon drift detectors (SDDs). However, previous GSDDs were fabricat...

A setup for measuring mechanical losses of silicon wafers has been fully characterized from room temperature to 4 K in the frequency range between 300 Hz and 4 kHz: it consists of silicon wafers with nodal suspension and capacitive and optical vibration sensors. Major contributions to mechanical losses are investigated and compared with experimental data scanning the full temperature range; in ...

By combining nanosphere lithography with template stripping, silicon wafers were patterned with hexagonal arrays of nanowells or pillars. These silicon masters were then replicated in gold by metal evaporation, resulting in wafer-scale hexagonal gratings for plasmonic applications. In the nanosphere lithography step, two-dimensional colloidal crystals of 510 nm diameter polystyrene spheres were...

Reducing solar cell thickness is an attractive way to reduce material costs. However, model calculations in this paper show that if rear surface recombination velocity (S) is greater than about 1000 cm/s, a 100-μm-thick screen-printed cell on solar-grade material has a lower efficiency than a 300-μm-thick cell. The literature demonstrates that S < 1000 cm/s is readily achievable on monocrystall...

A new approach using Fixed Abrasive (FA) pads has been undertaken to overcome the problem of non-uniform thick film Silicon-on-Insulator (SOI) wafers after CMP polishing. The theoretical models indicating the advantages of the 2-body system of the fixed abrasive configuration vs. the conventional 3-body system of slurry based polishing have been convincingly demonstrated in practise upon experi...

We have processed pin-diodes and strip detectors on nand p-type high-resistivity silicon wafers grown by magnetic Czochralski method. The Czochralski silicon (Cz-Si) wafers manufactured by Okmetic Oyj have nominal resistivity of 900O cm and 1.9 kO cm for nand p-type, respectively. The oxygen concentration in these substrates is slightly less than typically in wafers used for integrated circuit ...

We compare the recombination properties of three important types of multicrystalline silicon wafers for solar cells, namely conventionally-solidified p-type and n-type multicrystalline wafers, and also the recently developed ‘high performance’ p-type multicrystalline wafers. Three distinct regions of the wafers are examined in detail. These are the intra-grain regions, the grain boundaries, and...

4H silicon carbide (4H-SiC) holds great promise for high-power and high-frequency electronics, in which high-quality 4H-SiC wafers with both global local planarization are cornerstones. Chemical–mechanical polishing (CMP) is the key processing technology of wafers. Enhancing performance CMP critical to improving surface quality reducing cost In this review, superior properties introduced. The d...

We have studied the removal of submicrometer particles from silicon wafers by the steam laser cleaning (SLC) and dry laser cleaning (DLC) processes. These processes are currently being investigated as new promising cleaning technologies for complementing traditional methods in industrial applications. For SLC a thin liquid layer (e.g. a water-alcohol mixture) is condensed onto the substrate, an...