نتایج جستجو برای: sputter etching

تعداد نتایج: 18291  

2011
L. V. Minh F. Horikiri K. Shibata H. Kuwano

In this paper, a new lead-free piezoelectric (K,Na)NbO3 (KNN) film is presented as a promising, environment-friendly alternative to the conventional piezoelectric thin film materials like PZT, etc. with regard to applying into piezo-MEMS devices in general and micro-energy-harvesting devices in particular. The KNN films deposited by the RF magnetron sputtering deposition system were revealed ex...

Journal: :The Review of scientific instruments 2009
B Rubin J L Topper C C Farnell A P Yalin

We present a quartz crystal microbalance-based system for high sensitivity differential sputter yield measurements of different target materials due to ion bombardment. The differential sputter yields can be integrated to find total yields. Possible ion beam conditions include ion energies in the range of 30-350 eV and incidence angles of 0 degrees-70 degrees from normal. A four-grid ion optics...

Journal: :Applied Surface Science 2021

Abstract Ar+ sputter etching is often used prior to X-ray photoelectron spectroscopy (XPS) analyses with the intention remove surface oxides and contaminants. Since XPS probing depth comparable thickness of ion-beam modified layer signal from latter dominates spectra. We check here conditions for reliable analysis by studying ion irradiation effects single-phase Group IVB transition metal (IVB-...

Abstract Background and aim: Over the years, improvments have been done to simplify clinical bonding procedure. One of these material is Transbond™ Plus Self Etching. The aim of this study was to evaluate the effect of saliva contamination and reusing Transbond™ Plus Self Etching Primer (SEP) on shear bond strength of orthodontic brackets. Materials and Methods: Fifty premolars divided into fiv...

1999
Seung-Hyun Lim Jin-Won Park Hwan-Kuk Yuh Euijoon Yoon Sang In Lee

Reactive ion etching (RIE) using fluorocarbon chemistry is widely used to open contact holes in dielectric layers for very large scale integration (VLSI) since it provides high anisotropy and selectivity over Si. However, it is known that the RIE leaves fluorocarbon residues on the exposed surface after etching of silicon dioxide [1,2]. These residue layers were reported to be nonvolatile, chem...

Journal: :journal of dental research, dental clinics, dental prospects 0
abdolrahim davari mostafa sadeghi hamid bakhshi

background and aims. er:yag laser irradiation has been claimed to improve the adhesive properties of dentin; therefore, it has been proposed as an alternative to acid etching. the aim of this in vitro study was to investigate the shear bond strength of an etch-and-rinse adhesive system to dentin surfaces following er:yag laser and/or phosphoric acid etching. materials and methods. the roots of ...

2017
Renate Sitte Sima Dimitrijev

Integrated processing of MOS gate dielectric structures hasbeen carried out in an ultraclean, multichamber processing system as aprototype for cluster (multichamber) processing in order to understandthe potential and limitations of cluster pub 07sm01-rubloff &pubpro-;cessing for this application. With the enhanced surface cleanliness andcontamination control enabled in this p...

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