نتایج جستجو برای: sputtering atoms

تعداد نتایج: 67393  

2016
Wanggang Zhang Yiming Liu Diaoyu Zhou Hui Wang Wei Liang Fuqian Yang

Using magnetron sputtering and heat treatment, Ag@TiO2 nanotubes are prepared. The effects of heat-treatment temperature and heating time on the evolution of Ag nanofilms on the surface of TiO2 nanotubes and microstructure of Ag nanofilms are investigated by X-ray diffraction, field emission scanning electron microscopy, and transmission electron microscopy. Ag atoms migrate mainly on the outmo...

2007
Atsushi Ito Hiroaki Nakamura

New interlayer intermolecular potential model was proposed and it represented “ABAB” staking of graphite. Hydrogen atom sputtering on graphite surface was investigated usingmolecular dynamics simulation. In the initial short time period, maintaining the flat structure of graphenes, hydrogen atoms brought about the difference interaction process in each incident energy. The first graphene often ...

Journal: :Journal of Nuclear Materials 2022

In ITER, the first mirrors would be vulnerable to deposition from wall materials, namely beryllium (Be) and tungsten (W) in mixed compositions. this study we investigate capactively coupled RF plasma sputtering of such Be-W deposits on rhodium-coated substrates, using deuterium as process gas, track enrichment W during process. Experiments were conducted with concentration varying 2 8.3 at.%, m...

1999
Victor I. Matveev Olga V. Karpova

We propose the generalization of a known established empirically (Wahl W. and Wucher A. Nucl. Instrum. Meth. B 94, 36(1994)) power law, describing relative mass-spectra of neutral sputtered clusters, on the cases of arbitrary cluster charges. The fluctuation mechanism of charge state formation of sputtering products in the form of large clusters with the number of atoms N ≥ 5 is also proposed. ...

2009
HY Yang SF Yu SP Lau TS Herng M Tanemura

Fe-doped ZnO nanoneedles (NDs) were fabricated by an Ar+ ion sputtering technique operated at room temperature. The as-grown samples show both ferromagnetic and lasing properties. The saturated magnetization moment was measured from 0.307 to 0.659 emu cm-3 at the field of 10 kOe with various Fe concentrations. Intense ultraviolet random lasing emission was observed from Zn1 - xFexO NDs at room ...

Journal: :Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics 2000
Wang Cohen Ruzic Goeckner

Energy distributions of nitrogen atoms (N) in a hollow-cathode planar sputtering magnetron were obtained by use of optical emission spectroscopy. A characteristic line, N I 8216.3 A, well separated from molecular nitrogen emission bands, was identified. Jansson's nonlinear spectral deconvolution method, refined by minimization of chi(2)(w), was used to obtain the optimal deconvolved spectra. Th...

Journal: :Coatings 2021

We present a new method for coating deposition on micro cutters without an increase in their cutting edges radii caused by the deposition. For this purpose, are sharpened before with concentrated beam of fast argon atoms. The sharpening decreases initial radius and, hence, limits its value after atoms is generated using immersed gas discharge plasma concave grid under negative high voltage. Ion...

2005
Jones Alami

The present thesis addresses two research areas related to film growth in a highly ionized magnetron sputtering system: plasma characterization, and thin film growth and analysis. The deposition technique used is called high power pulsed magnetron sputtering (HPPMS). Characteristic for this technique are high energy pulses (a few Joules) of length 50-100 μs that are applied to the target (catho...

2007
F Buatier de Mongeot A Toma A Molle S Lizzit L Petaccia A Baraldi

Nonequilibrium periodic nanostructures such as nanoscale ripples, mounds and rhomboidal pyramids formed on Rh(110) are particularly interesting as candidate model systems with enhanced catalytic reactivity, since they are endowed with steep facets running along nonequilibrium low-symmetry directions, exposing a high density of undercoordinated atoms. In this review we report on the formation of...

2004
H He

When prepared by conventional evaporation or sputtering, thin films of amorphous silicon contain a large concentration of defects and microvoids.3,4 These give rise to localized states in the energy gap of the material.3,4 Plasma-enhanced chemical vapor deposition (PECVD), using silicon hydrides, significantly reduces the number of defects and thereby lowers the concentration of localized state...

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