In this paper, a SRAM cell structure which uses pMOS access transistors and predischarged bitlines is presented. By using the strained pMOS transistor technology, the degradation of the read static noise margin (SNM) at high supply voltages due to the aging, especially in the presence of symmetric stress, is suppressed. In contrast to conventional cell, the write margin of the proposed cell doe...

The need for high speed and density in the modem semiconductor industry requires new channel materials and techniques for improved carrier transport and continuous scaling of the device dimensions. As a material for enhanced hole transport strained-Ge is implemented in this work. High-k dielectric and metal gate stack is used for improved electrostatic control, as an alternative to the unstable...

The influence of lattice strain on non-stoichiometry and surface chemical composition was investigated for epitaxial Nd2NiO4+δ (NNO) films during annealing in ultra high vacuum (below 10 mbar) and temperatures of up to 700C. (100)and (001)-oriented films with tensile and compressive lattice strain along c-axis were fabricated using pulsed laser deposition method. A significant decrease in the c...

Strain-promoted inverse electron-demand Diels-Alder cycloaddition (SPIEDAC) reactions between 1,2,4,5-tetrazines and strained dienophiles, such as bicyclononynes, are among the fastest bioorthogonal reactions. However, the synthesis of 1,2,4,5-tetrazines is complex and can involve volatile reagents. 1,2,4-Triazines also undergo cycloaddition reactions with acyclic and unstrained dienophiles at ...

It is demonstrated that relaxation of GaAs/InxGa12xAs/GaAs strained-layer heterostructures can be brought about by postfabrication thermal processing. Misfit dislocations are introduced into the structure during thermal processing, even though the thickness of the strained layer is well below the critical value predicted by the Matthews–Blakeslee model. The misfit dislocations are observed to b...

We provide evidence of nanopatterning-induced bending of an ultrathin tensile strained silicon layer directly on oxide. This strained layer is achieved through the epitaxial growth of silicon on a Si(0.84)Ge(0.16) virtual substrate and subsequent transfer onto a SiO(2)-capped silicon substrate by combining hydrophilic wafer bonding and the ion-cut process. Using high resolution transmission ele...

Strain engineering is an effective way to modify functional properties of thin films. Recently, the importance of octahedral rotations in pervoskite films has been recognized in discovering and designing new functional phases. Octahedral behavior of SrRuO3 film as a popular electrode in heterostructured devices is of particular interest for its probable interfacial coupling of octahedra with th...

The protein kinase catalytic domain contains several conserved residues of unknown functions. Here, using a combination of computational and experimental approaches, we show that the function of some of these residues is to maintain the backbone geometry of the active site in a strained conformation. Specifically, we find that the backbone geometry of the catalytically important HRD motif devia...

We provide a novel thinking of regularization neural networks. We smooth the objective of neural networks w.r.t small adversarial perturbations of the inputs. Different from previous works, we assume the adversarial perturbations are caused by the movement field. When the magnitude of movement field approaches 0, we call it virtual movement field. By introducing the movement field, we cast the ...