نتایج جستجو برای: stressing

تعداد نتایج: 3603  

Journal: :Microelectronics Reliability 2003
Hua Ye Douglas C. Hopkins Cemal Basaran

Measuring mechanical implications of high current densities in microelectronic packaging interconnects has always been a challenging goal. Due to small interconnect size this task has typically been accomplished by measuring the change in electrical resistance of the joint. This measurement parameter is global and does not give local mechanical state information. Also, understanding strain evol...

2014
L. Trabzon O. O. Awadelkarim J. Werking G. Bersuker Y. D. Chan

Articles you may be interested in Observation of gate bias dependent interface coupling in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors Mobility comparison between front and back channels in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors by the front-gate split capacitance-voltage method Appl. Trap evaluations of metal/oxide/sil...

Journal: :Monthly Notices of the Royal Astronomical Society 2013

Journal: :Journal of Investigative Dermatology 2014

2011
X. Gu K. C. Yung Y. C. Chan D. Yang

Individual effect of thermomigration (TM) and combined effect of TM and electromigration (EM) on the microstructural variation in Sn8Zn3Bi was investigated by stressing line-type Au/Ni–P/Cu-Sn8Zn3Bi-Au/Ni–P/Ni solder joints with a 5 9 10 A/cm alternating current (AC) or direct current (DC) at 110 C. Due to the different thermoelectric characteristics of Cu and Ni wires, a thermal gradient of 19...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید