80-nm self-aligned nand p-channel I-MOS devices were demonstrated by using a novel fabrication method featuring double sidewall spacer, elevated drain structure and RTA process. The fabricated devices showed a normal transistor operation with extremely small subthreshold swing less than 12.2 mV/dec at room temperature. The nand p-channel I-MOS devices had an ON/OFF current of 394.1/0.3 μA and 3...

The structure of the flexible IGZO TFTs was deposited on PET substrates using a magnetron radio frequency co-sputtering system at a low temperature. The resulting flexible IGZO TFTs exhibited the lower subthreshold swing value of 0.25 V/decade and the higher field-effect mobility of 24.4 cm/V-s. The field-effect mobility stability was measured by a bending radius of 1.17 cm under stress time fo...

Two-dimensional transitional metal dichalcogenide (TMDC) field-effect transistors (FETs) are proposed to be promising for devices scaling beyond silicon-based devices. We explore the different effective mass and bandgap of the channel materials and figure out the possible candidates for high-performance devices with the gate length at 5 nm and below by solving the quantum transport equation sel...

The recent development of MOSFET demands innovative approach to maintain the scaling into nanoscale dimension. This paper focuses on the physical nature of vertical MOSFET in nanoscale regime. Vertical structure is one of the promising devices in further scaling, with relaxed-lithography feature in the manufacture. The comparison of vertical and lateral MOSFET performance for nanoscale channel ...

We analyze and present an input gain-varying scheme for maximizing dynamic range in a well-known Gm–C bandpass filter by both minimizing noise for small input signals, and by achieving balanced swing levels at all filter nodes for large input signals. A micropower bandpass filter suitable for use in cochlear implants and other powerconstrained biomedical applications was implemented and tested ...

The electrical characteristics and stabilities of dual-gate (DG) coplanar homojunction amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) are described. When the gate voltage is applied on top and bottom electrodes, the DG a-IGZO TFT showed an excellent electrical performance with the subthreshold swing of 99 mV/dec, the mobility of 15.1 cm/V·s and the on-off ratio of 10. U...

Source-to-drain tunneling is investigated for Si triple-gate nanowire transistors. The full-band quantum transport problem is solved in an atomistic basis using the nearestneighbor sp3d5s∗ tight-binding method. It is self-consistently coupled to the threedimensional calculation of the electrostatic potential in the device using the finite element method. This procedure is applied to the computa...

Low-doped silicon multi-nanowire field effect transistors with high ON/OFF ratio over 10(7) and a low subthreshold swing of 60-120 mV dec(-1) are fabricated using lithographic semiconductor processes. The use of multi-nanowires instead of a single nanowire as sensing elements has shown improved device uniformity and stability in buffer solutions. The device stability is further improved with su...