نتایج جستجو برای: sulfur tin tin oxide nanocomposite

تعداد نتایج: 230167  

2016
Lie Yang Tao Dai Yuecun Wang Degang Xie Lakshmi Narayan Ju Li Xiaohui Ning

Chestnut-like SnO2 and SnO2/C nanocomposites with hierarchical structures are synthesized by hydrothermally oxidizing Sn nanoparticles in glucose solution. Structural characterizations using SEM and TEM reveal that the SnO2 nanoparticles are composed of numerous, randomly arranged SnO2 nanosheets with hollow cores. Owing to the short electron and ion diffusion distances and transformation strai...

Journal: :Microelectronics Reliability 2011
P. C. Feijoo Moonju Cho M. Togo E. San Andrés Guido Groeseneken

PBTI degradation on FinFETs with HfO2/TiN gate stack (EOT < 1 nm) is studied. Thinner TiN layer decreases interfacial oxide thickness, and reduces PBTI lifetime. This behavior is consistent with the results in planar devices. Corner rounding effect on PBTI is also analyzed. Finally, charge pumping measurements on devices with several fin widths devices apparently show a higher density of defect...

2012
Yan-Gu Lin Yu-Kuei Hsu Ying-Chu Chen Li-Chyong Chen San-Yuan Chen

C-dopedZnOhierarchically porous nanoarchitectures were synthesized in situ on indium tin oxide (ITO) through a counter strategy. The PECperformance of the C-doped ZnOnanoarchitectures in the splitting of water without sacrificial reagents was systematically evaluated for the first time. In comparison to other ZnO-based photoanodes in the literature, C-doped ZnO nanoarchitectures exhibit a strik...

2002
Scott H. Brewer Stefan Franzen

Variable angle reflectance FTIR was used to investigate the reflectance of thin films of either indium tin oxide (ITO) or fluorine-doped tin oxide (SFO) on glass substrates in the mid-IR. The reflectance was observed to depend on the incident angle, wavenumber, and the polarization used. The Drude model and the Fresnel equations for reflection at a single dielectric boundary were used to interp...

2008
Tammy P. Chou Qifeng Zhang Bryan Russo Guozhong Cao

We prepared of electrodes that consist of TiO2 with addition of tin-doped indium oxide (ITO) or fluorine-doped tin oxide (FTO) nanoparticles and the application of such electrodes on dye-sensitized solar cell. As compared to TiO2 alone, the addition of ITO and FTO nanoparticles resulted in an efficiency improvement of ~ 20% up to ~ 54% for the TiO2ITO and TiO2-FTO systems, respectively. This im...

2015
Lado Filipovic Siegfried Selberherr

The integration of gas sensor components into smart phones, tablets and wrist watches will revolutionize the environmental health and safety industry by providing individuals the ability to detect harmful chemicals and pollutants in the environment using always-on hand-held or wearable devices. Metal oxide gas sensors rely on changes in their electrical conductance due to the interaction of the...

2011
S. V. Yampolskii

A self-consistent, mean-field model of charge-carrier injection and unipolar transport in an organic semiconductor diode is developed utilizing the effective transport energy concept and taking into account a realistic density-of-states distribution as well as the presence of trap states in an organic material. The consequences resulting from the model are exemplarily discussed on the basis of ...

Journal: :Langmuir : the ACS journal of surfaces and colloids 2006
Victor M Bermudez Alan D Berry Heungsoo Kim Alberto Piqué

The preparation and functionalization of ITO surfaces has been studied using primarily X-ray photoemission spectroscopy and infrared reflection-absorption spectroscopy (IRRAS) and the reagents n-hexylamine and n-octyltrimethoxysilane (OTMS). Particular attention has been paid to characterization of the surfaces both before and after functionalization. Surfaces cleaned by ultraviolet (UV)/ozone ...

2012
Jaeyeong Heo Sang Bok Kim Roy G. Gordon

Bottom-gate thin film transistors with amorphous zinc tin oxide channels were grown by atomic layer deposition. The films maintained their amorphous character up to temperatures over 500 C. The highest field effect mobility was 13 cm/V s with on-to-off ratios of drain current 10–10. The lowest subthreshold swing of 0.27 V/decade was observed with thermal oxide as a gate insulator. The channel l...

2012
Indu Verma Ritesh Kumar Nidhi Verma

Tin oxide (SnO2) thin films are widely used by solgel method. One of the most important factors that influence the sensitivities of sensing material is its structural properties especially surface morphology. In this work, we present preparation and characterization of undoped and antimony-doped tin oxide (Sb: SnO2) thin film nanostructures for gas sensing applications. The films were character...

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