نتایج جستجو برای: tantalum carbide

تعداد نتایج: 11841  

Sabokrouh , M. ,

In this article the effects of carburizing heat treatment on girth weld with containing titanium oxide and titanium carbide nanoparticles (X-65 grade of gas pipeline) is evaluated. The charpy results show that in the carburized sample containing titanium oxide and titanium carbide nanoparticles compared to the no heat treatment sample (containing titanium carbide and titanium carbide nanopartic...

Journal: :CoRR 2006
Ming-Tzer Lin Chi-Jia Tong Chung-Hsun Chiang

A novel design electroplating spring frame MEMS structure specimen is demonstrated here. The specimen can be fit into a specially designed microtensile apparatus which is capable of carrying out a series of tests on submicro scale freestanding thin films. Certain thin films applicable in MEMS were tested including sputtered Chrome, Nicole, Copper, Tantalum Nitride thin films. Metal specimens we...

Journal: :Orthopaedics & traumatology, surgery & research : OTSR 2015
F Boureau S Putman A Arnould G Dereudre H Migaud G Pasquier

Management of bone loss is a major challenge in revision total knee arthroplasty (TKA). The development of preformed porous tantalum cones offers new possibilities, because they seem to have biological and mechanical qualities that facilitate osseointegration. Compared to the original procedure, when metaphyseal bone defects are too severe, a single tantalum cone may not be enough and we have d...

Journal: :The Journal of arthroplasty 2015
Anders Troelsen Meridith E Greene David C Ayers Charles R Bragdon Henrik Malchau

Conventional radiostereometric analysis (RSA) for wear is not possible in patients with tantalum cups. We propose a novel method for wear analysis in tantalum cups. Wear was assessed by gold standard RSA and the novel method in total hip arthroplasty patients enrolled in a randomized controlled trial receiving either titanium or tantalum cups (n=46). The novel method estimated the center of the...

2002
Dirce Pozebon Lilian Valiente Éder C. Lima Leandro S. Ferreira

Inductively coupled plasma optical emission spectrometry was applied to the determination of trace impurities in tantalum powder. The matrix effects of tantalum in the determination of trace level impurities such as Cr, Fe, Nb, Ni, and Ti were studied by measuring the intensities of each trace element in solution at various concentrations of tantalum. As the concentration of the interfering ele...

2015
William Paul Huhn Michael Widom

First principles calculations have become one of the main computational methods in condensed matter physics and physical chemistry due to their high degree of accuracy without the usage of any fitting parameters. Interest has been growing in the engineering disciplines to exploit these properties to predict new materials with desired material properties, greatly accelerating the prototyping of ...

2008
V. N. Panteleev

The work carried out has as a general goal the development of a massive (up to 1 kg) uranium carbide target prototype for the third generation ISOL facilities, where two-step reactions will be used to produce intense neutron-rich nuclear beams. For more than thirty years UCx targets have been explored for the production of a large set of neutron-rich and neutron-deficient heavy nuclei. The main...

2007
Yunyu Wang Zhiquan Luo Bin Li Paul S. Ho Zhen Yao Li Shi Eugene N. Bryan Robert J. Nemanich

A comparison study has been conducted on the formation of catalyst nanoparticles on a high surface tension metal and low surface tension oxide for carbon nanotube CNT growth via catalytic chemical vapor deposition CCVD . Silicon dioxide SiO2 and tantalum have been deposited as supporting layers before deposition of a thin layer of iron catalyst. Iron nanoparticles were formed after thermal anne...

Journal: :Chinese Physics 2022

In this paper, the failure mode and mechanism of silicon carbide (SiC) Schottky barrier diode (SBD) irradiated by high-energy tantalum (Ta) ions are studied. The experimental results show that reverse bias voltage during irradiation is key factor causing SiC SBDs. When device 400 V, heavy will cause single event burnout (SEB), a “hole” formed melting material appears in device. 250–300 manifest...

TaC and HfC are thought to have the highest melting point (~4000°C) among all refractory materials. The binary solid solution of TaC and HfC (Ta4HfC5) is also considered as the most refractory material with the melting point over 4000 °C and valuable physical and mechanical properties. The main goal of this work is to fabricate TaC/HfCbased composites which consolidated by means of spark plasma...

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