A diode-pumped Q-switched and injection-seeded single-frequency laser, generating tunable laser radiation at 935 nm, is presented. Using Nd:YGG (Y3Ga5O12) as the active medium, the laser that was developed to serve as a transmitter for water–vapor lidar measurements. The configuration consists of a stable resonator in rod geometry that is injection seeded by a narrowband diode laser and stabili...

www.tubecad.com Copyright © 2003 GlassWare All Rights NEXT > < PREVIOUS 1 Pg. Mechanical engineers must know the basics of their practice — lever, wedge, wheel and axle, pulley, and screw — as these five simple machines form the basis of all other more complex machines. Likewise, vacuum tube circuit designers must know the inner workings of the grounded-cathode amplifier, the cathode follower, ...

We are developing a 95 GHz, 200 W, wideband vacuum electronic amplifier based on a 20 kV, 120 mA electron beam. The serpentine circuit is fabricated by multilayer UV-LIGA using an embedded polymer monofilament, which produces an all-copper monolithic structure with beam tunnel. We also discuss extension of the technique to upper millimeter-wave circuits at 670 GHz.

We have constructed a dc-coupled differential amplifier capable of operating in the 4.2 K – 300 K temperature range. The amplifier can be operated at high-bias setting, where it dissipates 5 mW, has noise temperature TN < 0.8 K at 4 k source resistance and >40 MHz bandwidth at 4.2 K bath temperature. The bias setting can be adjusted: at our lowest tested setting the amplifier dissipates <100 W,...

The design of frequency-tunable amplifiers is investigated and the tradeoff between linearity, efficiency and tunability is revealed. Several tunable amplifiers using various varactor diode topologies as tunable devices are designed by using loadpull techniques and their performances are compared. The amplifier using anti-series distortion-free varactor stack topology achieves 38% power added e...

This paper presents two highly integrated receiver circuits fabricated in InP heterojunction bipolar transistor (HBT) technology operating at up to 2.5 and 7.5 Gb/s, respectively. The first IC is a generic digital receiver circuit with CMOS-compatible outputs. It integrates monolithically an automatic-gain-control amplifier, a digital clock and data recovery circuit, and a 1 : 8 demultiplexer, ...

This paper describes a new approach to amplify optical images by using optically pumped doped cores in a multi-core optical fiber structure. This approach combines the high gain and high efficiency properties of cladding pumped optical amplifiers with the imaging properties of coherent fiber bundles. The individual cores correspond to the pixels in the image amplifier. We have demonstrated 3x3 ...

of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode Katsuhiko Nishiguchi, Andres Castellanos-Gomez, Hiroshi Yamaguchi, Akira Fujiwara, Herre S. J. van der Zant, and Gary A. Steele NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ Delft, The N...

Novel spin torque transfer magnetic tunnel junction (STT-MTJ) based memory cell topologies are introduced to improve both the sense margin and the current ratio observed by the sense circuitry. These circuits utilize an additional transistor per cell in either a diode connected or gate connected manner and maintain leakage current immunity within the data array. An order of magnitude increase i...