Introduction: Tunnel field effect transistors (TFET) have gained interest recently owing to their potential in achieving sub-kT/q steep switching slope, thus promising low Vcc operation[1-5]. Steep switching slope has already been demonstrated in Silicon TFET [2]. However, it has been theoretically shown and experimentally proved that Si or SixGe1-x based homo-junction or hetero-junction TFETs ...

Submitted for the MAR14 Meeting of The American Physical Society Quantum mechanical solver for confined heterostructure tunnel field-effect transistors DEVIN VERRECK, imec, KU Leuven, MAARTEN VAN DE PUT, BART SOREE, imec, Universiteit Antwerpen, ANNE VERHULST, imec, WIM MAGNUS, imec, Universiteit Antwerpen, WILLIAM VANDENBERGHE, University of Texas at Dallas, GUIDO GROESENEKEN, imec, KU Leuven ...

A three-valued D-flip-flop (D-FF) circuit and a two-stage shift register built from InGaAs-based multiple-junction surface tunnel transistors (MJSTT) and Si-based metal-oxide-semiconductor field effect transistors (MOSFET) have been demonstrated. Due to the combination of the MJSTTs latching function and the MOSFETs switching function, the number of devices required for the D-FF circuit was gre...

A tunneling field effect transistor (TFET) attracts attention, because TFET circuits can achieve better energy efficiency than conventional MOSFET circuits. Although design issues in ultra low voltage logic circuits, such as the minimum operatable voltage (V DDmin), have been investigated for MOSFET's, V DDmin for TFET's have not been discussed. In this paper, V DDmin of TFET logic circuits is ...

A Silicon tunnel FET with Si1-x Gex source is investigated and optimized for improved performance. In order to optimize the device performance, Germanium mole fraction and the length of the SiGe region is varied and the optimum values are obtained. Moreover, the source/channel hetero-junction is assumed graded. The grading distance is varied from zero (abrupt hetero-junction) to total channel l...

Abstract The detection of biomolecules has been accomplished in this article by using the tunnel field effect transistor’s (TFET) bipolar nature. fabrication procedure made simpler, prices have gone down, and random dopant fluctuation (RDFs) eliminated charge plasma concept. objective work is to investigate performance a DopingLess- Dual Metal Gate- Cavity- HeteroJunction- Tunnel Field Effect T...

In this study, a model of a Schottky-barrier carbon nanotube fieldeffect transistor (CNT-FET), with ferromagnetic contacts, has been developed. The emphasis is put on analysis of current-voltage characteristics as well as shot (and thermal) noise. The method is based on the tight-binding model and the nonequilibrium Green’s function technique. The calculations show that, at room temperature, th...