Gate current in metal–oxide–semiconductor (MOS) devices, caused by carriers tunneling through a classically forbidden energy barrier, is studied in this paper. The physical mechanisms of tunneling in an MOS structure are reviewed, along with the particularities of tunneling in modern MOS transistors, including effects such as direct tunneling, polysilicon depletion, hole tunneling and valence b...

During the past two decades, there have been tremendous developments in near-field imaging and local probing techniques. Examples are the Scanning Tunneling Microscope (STM), Atomic Force Microscope (AFM), Near-field Scanning Optical Microscope (NSOM), Photon Scanning Tunneling Microscope (PSTM), and Scanning Thermal Microscope (SThM).Results showed that the average reflectance for a dopant con...

Based on the general form of the master equation for open quantum systems the tunneling is considered. Using the path integral technique a simple closed form expression for the tunneling rate through a parabolic barrier is obtained. The tunneling in the open quantum systems strongly depends on the coupling with environment. We found the cases when the dissipation prohibits tunneling through the...

Aggressive scaling of MOS devices requires use of ultra-thin gate oxides to maintain a reasonable short channel effect and to take the advantage of higher density, high speed, lower cost etc. Such thin oxides give rise to high electric fields, resulting in considerable gate tunneling current through gate oxide in nano regime. Consequently, accurate analysis of gate tunneling current is very imp...

Use of the pressure dependence of kinetic isotope effects, coupled with a study of their temperature dependence, as a probe for promoting motions in enzymatic hydrogen-tunneling reactions is reported. Employing morphinone reductase as our model system and by using stopped-flow methods, we measured the hydride transfer rate (a tunneling reaction) as a function of hydrostatic pressure and tempera...

Quantum tunneling between degenerate ground states through the central barrier of a potential is extended to excited states with the instanton method. This extension is achieved with the help of an LSZ reduction technique as in field theory and may be of importance in the study of macroscopic quantum phenomena in magnetic systems. Quantum effects on the macroscopic scale have attracted consider...

This study investigated the vault settlement characteristics of an unsymmetrically loaded tunnel which was excavated by annular excavation via core rock support method. Response surface methodology (RSM) was employed to design the experiments, evaluate the results with the purpose of optimizing the value of design parameters for reducing the vault settlement. The parameters such as horizontal d...

We present a theory of tunneling and resonant transitions in one-dimensional molecular systems which is based on Green s function theory of electron sub-barrier scattering off the structural units (or functional groups) of a molecular chain. We show that the many-electron effects are of paramount importance in electron transport and they are effectively treated using a formalism of subbarrier s...

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