As an add-on device option for the ultra-low power CMOS technology, the double-gated vertical-channel Tunnel Field-Effect Transistors (TFETs) of different source configurations are comparatively studied from the perspectives of fabrication and current drivability. While the Top-Source design where the source of the device is placed on the top of the fin makes the fabrication and source engineer...

We present scanning tunneling spectroscopic and high-field thermodynamic studies of holeand electron-doped (pand n-type) cuprate superconductors. Our experimental results are consistent with the notion that the ground state of cuprates is in proximity to a quantum critical point (QCP) that separates a pure superconducting (SC) phase from a phase comprised of coexisting SC and a competing order,...

The zero-bias tunneling resonance in quantum Hall bilayer systems is investigated via numerical simulations of the classical two-dimensional XY model with a symmetry-breaking field. Disorder is included in the model and is shown to nucleate strings of overturned spins proliferated through the system, with unpaired vortices and antivortices at their end points. This string glass state supports l...

We investigate Andreev reflection (AR) resonant tunneling through a precessing spin which is coupled to a normal metallic lead and a superconducting lead. The formula of the AR conductance at zero temperature is obtained as a function of chemical potential and azimuthal angle of the spin precessing by using the nonequilibrium Green function method. It is found that as the local spin precesses i...

We have analyzed the effect of electron-LO phonon interaction in a doublebarrier resonant tunneling structure under a magnetic field B applied parallel to the tunneling current. While the low temperature anti-crossing phenomenon has already been investigated, here we study the phonon absorption resonant magnetotunneling at finite temperatures. The Matsubara technique is used to sum up resonant ...

Interband quantum tunneling of electrons in semiconductors is of intense recent interest as the underlying transport mechanism in tunneling field-effect transistors. Such transistors can potentially perform electronic switching with lower energy than their conventional counterparts. The recent emergence of two-dimensional (2D) semiconducting crystals provides an attractive material platform for...

In this paper, we propose and validate a Heterogate DielectricDual Material Gate-Gate All Around, Tunnel Field Effect Transistor (HD-DMG-GAA-TFET). A comparative study for different values of high-k has been done, and it has been clearly shown that the problem of lower ION (which hinders the circuit performance of TFET) can be overcome by using the dielectric engineered hetero-gate architecture...

The role of Aharonov-Bohm effect in quantum tunneling is examined when potential is defined on S1 and has N -fold symmetry. For N = 2 case the quenched tunneling splitting occurs at cos Φ/2 = 0 where Φ is magnetic flux. For N = 3 and N = 4 cases the ground state energies splitted from threeand four-fold degenerate vacua by quantum tunneling are explicitly computed. The N = 4 case is applied to ...

We show that the observable rate of tunneling ionization of a molecule in intense low-frequency laser field is affected by nuclear motion and can essentially differ from a bare electronic characteristic calculated for fixed nuclei. Both the absolute value of the rate and the shape of its orientation dependence are affected. The effect is significant for I ∼ 1014 W/cm2 and becomes more pronounce...