Electron states are studied for quantum dots in a strained Si quantum well, taking into account both valley and orbital physics. Realistic geometries are considered, including circular and elliptical dot shapes, parallel and perpendicular magnetic fields, and most importantly for valley coupling the small local tilt of the quantum-well interface away from the crystallographic axes. In absence o...

We demonstrate how rate equations can be employed to find analytical expressions for the sequential tunneling current through a quantum dot as a function of the tunnel rates, for an arbitrary number of states involved. We apply this method at the one-to-two electron transition where the electron states are known exactly. By comparing the obtained expressions to experimental data, the tunnel rat...

We have measured the low-temperature transport properties of an open quantum dot formed in a clean one-dimensional channel. For the first time, at zero magnetic field, continuous and periodic oscillations superimposed upon ballistic conductance steps are observed when the conductance through the dot G exceeds 2e 2 /h. We ascribe the observed conductance oscillations to evidence for Coulomb char...

The tuneability and control of quantum nanostructures in two-dimensional materials offer promising perspectives for their use future electronics. It is hence necessary to analyze transport such nanostructures. Material properties as a complex dispersion, topology, charge carriers with multiple degrees freedom, are appealing novel device functionalities but complicate theoretical description. He...

We study nonequilibrium current fluctuations through a quantum dot, which includes a ferromagnetic Hund's rule coupling J, in the low-energy Fermi liquid regime using the renormalized perturbation theory. The resulting cumulant for the current distribution in the particle-hole symmetric case shows that spin-triplet and spin-singlet pairs of quasiparticles are formed in the current due to the Hu...

CdSe quantum dots were in situ deposited on various structures of TiO2 photoanode by successive ionic layer adsorption and reaction (SILAR). Various sensitized TiO2 structures were integrated as a photoanode in order to make quantum dot sensitized solar cells. High power conversion efficiency was obtained; 2.89 % (Voc=524 mV, Jsc=9.78 mA/cm2, FF=0.56) for the cells that sensitized by SILAR meth...

Full counting statistics of electron transport is a powerful diagnostic tool for probing the nature of quantum transport beyond what is obtainable from the average current or conductance measurement alone. In particular, the non-Markovian dynamics of quantum dot molecule plays an important role in the nonequilibrium electron tunneling processes. It is thus necessary to understand the non-Markov...

In the framework of a microscopic model for intersubband gain from electrically pumped quantum-dot structures we investigate electrically pumped quantum-dots as active material for a mid-infrared quantum cascade laser. Our previous calculations have indicated that these structures could operate with reduced threshold current densities while also achieving a modal gain comparable to that of quan...

We report a method of creating electrostatically induced quantum dots by thermal diffusion of interstitial Mn ions out of a p-type (GaMn)As layer into the vicinity of a GaAs quantum well. This approach creates deep, approximately circular, and strongly confined dotlike potential minima in a large (200 microm) mesa diode structure without need for advanced lithography or electrostatic gating. Ma...

Silicon-quantum-dot qubits must contend with low-lying valley excited states that are sensitive functions of the quantum-well heterostructure and disorder; quantifying maximizing energies these critical to improving device performance. We describe a spectroscopic method for probing in isolated $\mathrm{Si}$/$\mathrm{Si}$-$\mathrm{Ge}$ double quantum dots using standard baseband pulsing techniqu...