نتایج جستجو برای: zigzag mixing
تعداد نتایج: 68186 فیلتر نتایج به سال:
In graphene edges or nanographene, the presence of edges strongly affects the electronic structure depending on their edge shape (zigzag and armchair edges) as observed with the electron wave interference and the creation of non-bonding π -electron state (edge state). We investigate the edge-inherent electronic features and the magnetic properties of edge-sate spins in nanographene/graphene edg...
Electronic, magnetic and spin-polarized transport properties of the zigzag-zigzag pentagraphene nanoribbon are investigated theoretically within framework density functional theory combined with non-equilibrium Green’s function formalism. It is found that spinunpolarized ZZ-PGNR behaves as metal. However, ZZ-PGNRs show to be semiconductor properties. More importantly, for based device, spin-fil...
In this study, a periodic zigzag channel with rectangular cross-section has been used in order to obtain a high-efficiency system for cooling a polymer electrolyte fuel cell. An appropriate function of fuel cells and enhancement of their lifetime require uniform temperature conditions of around 80°C. On the other hand, due to volume and weight constraints, a low-density compact heat exchanger i...
In the title compound, C(18)H(26)N(4)OS, the imine C=N bond has a Z configuration, whereas the N-N-C=S unit has an E conformation. In the crystal, mol-ecules are connected through N-H⋯O hydrogen bonds, forming zigzag chains running along the b axis. The nonyl chain adopts an extended zigzag conformation.
This paper describes a specific zigzag theory structure and relates its application to the information systems field. The foundations discussed are related to reality, knowledge, action and theory structure. The zigzag theory structure can be differentiated and used to describe task processes such as information systems development, and the use of information systems in business processes.
boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید