Locus of control is said to affect learners' academic achievement. This effect has scarcely been examined within general English context. This study is concerned with examining the differences in General English (GE) course achievement among university students of humanities, sciences, and engineering. It also explores the effect of locus of control (LOC) in GE course achievement among these th...

Sub #1 Sub #2 Sub #3 Sub #4 Breast Volume (BV, cc) GE 1.5 421 216 272 234 GE 3.0 463 224 291 227 Siemens 1.5 441 219 287 238 Philips 3.0 451 226 290 247 Variation 4.0 (%) 2.1 (%) 3.0 (%) 3.5 (%) Fibroglandular Tissue Volume (FV, cc) GE 1.5 62.9 56.1 80.7 67.6 GE 3.0 65.4 53.0 89.8 70.0 Siemens1.5 65.7 49.3 84.6 60.8 Philips 3.0 71.5 57.0 94.8 64.6 Variation 5.5 (%) 6.5 (%) 7.0 (%) 6.0 (%) Perce...

This paper investigates the crystal structure and optical absorption of Ge-doped Nb-oxide (Nb-Ge-O) thin films prepared by RF sputtering. A wide-gap material, Nb2O5, is selectively produced as a matrix to disperse Ge nanocrystals through compositional optimization with Ge chip numbers and oxygen ratio in argon. The optical-absorption spectra are obviously shifted to visible (vis) and near-infra...

In this study we have sampled the water column and sediments of the Gulf of Mexico to investigate the effects of high riverine terrigenous load and sediment redox conditions on the cycling of Ge and Si. Water column Ge/Si ratios across the Gulf of Mexico continental shelf range from 1.9 to 25 lmol/mol, which is elevated compared to the global ocean value of 0.7 lmol/mol. The Ge enrichment in th...

In this paper, we report a broad investigation of the optical properties of germanium (Ge) quantum-well devices. Our simulations show a significant increase of carrier density in the Ge quantum wells. Photoluminescence (PL) measurements show the enhanced direct-bandgap radiative recombination rates due to the carrier density increase in the Ge quantum wells. Electroluminescence (EL) measurement...

Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 < x < 1) graded buffer layer was demonstrated through a facile chemical vapor deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray ...

Ge distributions in ten iron meteorites with bulk Ge contents of 8.7 to 2000 ppm have been measured by electron probe microanalysis. Ge is concentrated almost entirely in the metallic phases. It was redistributed in the temperature range at which the Widmanstatten pattern developed. Ge content shows a positive correlation with Ni content, reaching a maximum in taenite and a minimum in kamacite ...

5 10 Teþ ions cm 2 were implanted in an Ge(001) substrate using an industrial implanter with a Teþ beam energy of 180 keV. In addition to usual implantation-mediated defects observed in Ge with usual dopants, Te implantations lead to the formation of amorphous surface GeO clusters exhibiting micrometer scale sizes, as well as deep extended defects. Implantation defects promote the formation of ...