A symmetric Power Amplifier with an optimized impedance quarter wave transmission line is presented using a thermally enhanced high Power LDMOS FET i.e. a 140W Infineon PTFC261402 device. This implementation is realized in the operating frequency of LTE Band41 (2.496GHz-2.69GHz) applicable for LTE base stations. This design achieves a high efficiency that persists for an output power back off r...

Thisarticlepresentsthedesign and fabrication ofa high power amplifierbased onwilkinson combiner. A 45W basic amplifier module isdesigned usinglaterally-diffused metal-oxide semiconductor (LDMOS) fieldeffect transistor (FET) PTFA260451E transistor. Wilkinson combineris used to combine two input powers toproduce 90W of power. Theproposed is researched, designed optimized usingadvanced design syst...

In this letter, a new cross-coupled charge pump for negative high voltage generation has been proposed. The problem of shoot-through current in the conventional cross-coupled charge pump is solved by a four clock phase scheme. By switching the power supply to each stage based on the supply voltage, a variable voltage gain is obtained. A complete analysis of the interaction between the power eff...

We apply our hot-carrier degradation (HCD) model, which uses the information about the carrier energy distribution, to represent HCD data measured in nand p-channel LDMOS transistors. In the first version of our model we use the spherical harmonics expansion approach to solve the Boltzmann transport equation (BTE), while in the second version we employ the drift–diffusion scheme. In the latter ...

An ultralow specific on-resistance (Ron,sp) accumulation-mode LDMOS (ALDMOS) is proposed and investigated by simulations experiments. The ALDMOS features two separated integrated diodes (SID) above the N-drift surface, which forms high density electron accumulation layer in on-state. Meanwhile, SID not only assists depleting to increase doping centration (Nd) off-state, but also modulates later...