The subcarriers of orthogonal frequency division multiplexing (OFDM) systems may fail to keep orthogonal to each other under timevarying channels. The loss of orthogonality among the subcarriers will degrade the system performace, and this effect is named intercarrier interference (ICI). In this paper, a Wiener-based successive interference cancellation (SIC) scheme is proposed to detect the OF...

Recent research efforts in growth of 3C-SiC are reviewed. Sublimation growth is addressed with an emphasis on the enhanced understanding of polytype stability in relation to growth conditions, such as supersaturation and Si/C ratio. It is shown that at low temperature/supersaturation spiral 6H-SiC growth is favored, which prepares the surface for 3C-SiC nucleation. Provided the supersaturation ...

The paper presents a model developed for numerical simulation of temperature dependence of a hypothetical Si and SiC diode and BJT current-voltage characteristics. A classical Si PN wide-base diode model and an E-M BJT model are used with SiC semiconductor-specific parameters. Intrinsic carrier concentrations, carrier mobility temperature and doping concentration dependence are calculated for b...

We report on highly resolved core-level and valence-band photoemission spectroscopies of hydrogenated, unreconstructed 6H-SiC(0001) and (0001̄) using synchrotron radiation. In the C 1s core level spectra of 6H-SiC(0001̄) a chemically shifted surface component due to C-H bonds is observed at a binding energy (0.4760.02) eV higher than that of the bulk line. The Si 2p core-level spectra of SiC(0001...

Successive interference cancellation (SIC) is a physical layer technique that enables the decoders to decode multiple simultaneously transmitted signals. The complicated model of SIC requires careful design of the MAC protocol and accurate adjustment of transmission parameters. We propose a new MAC protocol, known as CSMA-SIC, that employs the multi-packet reception capability of SIC. The propo...

The development of electrical contacts to silicon carbide with low specific resistivity and stability is a critical requirement for harsh environment MEMS applications. In this paper, we present a novel method to lower the ohmic contact resistivity and enhance the stability of Pt contacts to polycrystalline 3C-SiC (poly-SiC) operated at elevated temperatures. In particular, nanocrystalline grap...

We have investigated SiC/oxide interface structures by the use of spectroscopic ellipsometry. The depth profile of the optical constants of thermally grown oxide layers on SiC was obtained by observing the slope-shaped oxide layers, and the results suggest the existence of the interface layers, around 1 nm in thickness, having high refractive index than those of both SiC and SiO2. The wavelengt...