(Received 1 August 2012; accepted 10 September 2012; published online 8 October 2012) AlN/nþ-GaN heterostructure samples with AlN barrier layer thickness between 1 nm and 4 nm have been analyzed by electrochemical capacitance-voltage measurements with a semiconductorelectrolyte contact to estimate the surface potential of this heterostructure. The combination of using a semiconductor-electrolyt...

Aluminum nitride, an important member of the group III nitrides with the highest bandgap of about 6.2 eV, has excellent thermal conductivity, good electrical resistance, low dielectric loss, high piezoelectric response, and ideal thermal expansion, matching that of silicon. The interest in field-emission (FE) applications of AlN materials has grown because they exhibit a negative electron affin...

FIn this work, AlN/SiCN composite coatings were deposited by r.f.-reactive sputtering method using a facing target-type sputtering (FTS) apparatus with composite targets consisting of Al plate and SiC chips in a gaseous mixture of Ar and N2, and investigated their mechanical properties and microstructure. The indentation hardness (HIT ) of AlN/SiCN coatings prepared from composite targets consi...

Aluminum nitride (AlN) is a well known wide-band gap semiconductor that has been widely used in fabricating various ultraviolet photo-electronic devices. Herein, we demonstrate that a fiber laser can be achieved in Fe-doped AlN fiber where Fe is the active ion and AlN fiber is used as the gain medium. Fe-doped single crystal AlN fibers with a diameter of 20-50 μm and a length of 0.5-1 mm were p...

We measured the ellipsometric response from 0.7-5.4 eV of c-axis oriented AlN on Si (111) grown by molecular beam epitaxy. We determine the film thicknesses and find that for our AlN the refractive index is about 5-10% lower than in bulk AlN single crystals. Most likely, this discrepancy is due to a low film density (compared to bulk AlN), based on measurements using Rutherford backscattering. ...

Nanopatterned aluminum nitride (NP-AlN) templates were used to enhance the light extraction efficiency of the light-emitting diodes (LEDs). Here, the NP-AlN interlayer between the sapphire substrate and GaN-based LED was used as an effective light outcoupling layer at the direction of bottom side and as a buffer layer for growth of GaN LEDs. The cross-sectional transmission electron microscopy ...

Nanoarchaeosomes are non-hydrolysable nanovesicles made of archaeolipids, naturally functionalised with ligand for scavenger receptor class 1. We hypothesized that nitrogenate bisphosphonate alendronate (ALN) loaded nanoarchaeosomes (nanoarchaeosomes(ALN)) may constitute more efficient macrophage targeted apoptotic inducers than ALN nanoliposomes (nanoliposomes (ALN)). To aim, was in cholestero...

Text-based discussions in Asynchronous Learning Networks (ALN) may not be an optimal learning environment for all learners. This paper discusses the reasons why and explores the possibility of applying multimedia to ALN. The contribution of this paper is to provide ways of diversifying the ALN learning environment to accommodate the needs of diverse learners having different learning styles.

on AlN using AlN/GaN/AlN quantum wells and N isotopes Meng Qi, Guowang Li, Vladimir Protasenko, Pei Zhao, Jai Verma, Bo Song, Satyaki Ganguly, Mingda Zhu, Zongyang Hu, Xiaodong Yan, Alexander Mintairov, Huili Grace Xing, and Debdeep Jena Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA Ioffe Physico-Technical Institute, Russian Academy of Sciences, Saint Petersbu...

CONTEXT Alendronate (ALN) is a bisphosphonate compound that can be administered orally and has potential use in pediatric osteoporotic conditions. OBJECTIVE The objective was to evaluate the pharmacokinetics and single-dose tolerability of ALN in children with osteogenesis imperfecta. DESIGN ALN was administered iv and orally in a two-period, randomized crossover study, with doses separated...