Au nanoparticles are efficient catalysts for the vapour–solid–liquid (VLS) growth of semiconductor nanowires, but Au poses fundamental reliability concerns for applications in Si semiconductor technology. In this work we show that the choice of catalysts for Si nanowire growth can be broadened when the need for catalytic precursor dissociation is eliminated through the use of plasma enhancement...

We demonstrate that cold and hot isostatic pressing (CIP and HIP) is a novel, alternative method for organic semiconductor layer fabrication, where organic powder is compressed into a layer shape directly on a substrate with 200 MPa pressure. Spatial gaps between powder particles and the other particles, substrates, or electrodes are crushed after CIP and HIP, making it possible to operate orga...

Water is composed of two strong electrochemically active agents, H(+) and OH(-) ions, but has not been used as an active electronic material in oxide semiconductors. In this study, we demonstrate that water-infiltrated nanoporous glass electrically switches an oxide semiconductor from insulator to metal. We fabricated a field-effect transistor structure on an oxide semiconductor, SrTiO(3), usin...

The dynamic process of the reactions during deposition of M(Hf or Zr)O2 thin films on SiO2-covered silicon substrate in oxygen deficient conditions has been investigated. A series of reactions across the interface were identified with thermodynamic arguments and with X-ray Photoelectron Spectroscopy (XPS) and transmission electron microscopy (TEM) analyses. The oxygen deficient MOx < 2 absorbs ...

The construction of reduced graphene oxide or graphene oxide with semiconductor has gained more and more attention due to its unexpected optoelectronic and electronic properties. The synthesis of reduced graphene oxide (RGO) or graphene oxide-semiconductor nanocomposite with well-dispersed decorated particles is still a challenge now. Herein, we demonstrate a facile method for the synthesis of ...

This paper uses the results of the characterization of amorphous semiconductor thin film transistors (TFTs) with the quasi-permanent memory structure referred to as silicon oxide nitride semiconductor (SONOS) gates, to model spiking neural circuits. SONOS gates were fabricated and characterized. In addition, MOSFETs using organic copper phthalocyanine (CuPc) were fabricated with these SONOS gat...

The semiconductor CdS is generally found in the wurtzite structure. Prior experimental and theoretical results confirm that the semiconductor CdS nanoparticles maintain a wurtzite structure for diameters greater than 6 nm. There is disagreement in the literature for sizes smaller than 6 nm. We use the density-functional theory FIREBALL code and perform finite-temperature molecular dynamics simu...

This article explores, through experiments and finite element analysis, the ability to plastically deform thin-film semiconductor structures on deformable substrates to spherical cap shapes without cracking the semiconductor layers. The major challenge involves contending with the large strain due to extreme deformation that will crack uniform stiff layers, such as silicon or silicon nitride. B...

Ultra-thin p-type chalcogenide glass Ge2Sb2Te5 (GST) semiconductor layers are employed to form flexible thin-film transistors (TFTs). For the first time, TFTs based on GST show saturating output characteristics and an ON/OFF ratio up to 388, exceeding present reports by a factor of ~20. The channel current modulation is greatly enhanced by using ultra-thin 5 nm thick amorphous GST layers and 20...

Charge carrier dynamics in an organic semiconductor can often be described in terms of charge hopping between localized states. The hopping rates depend on electronic coupling elements, reorganization energies, and driving forces, which vary as a function of position and orientation of the molecules. The exact evaluation of these contributions in a molecular assembly is computationally prohibit...