While observations of charging damage during plasma-assisted deposition have been erratic thus far, concern abounds that it may worsen as aspect ratios increase and high-density plasmas are used more frequently. Simulations of pattern-dependent charging during interlevel dielectric deposition reveal that the initial conformality of the dielectric film plays a crucial role in metal line charge u...

Aerosol-assisted chemical vapour deposition (AACVD) of Cd[(SePiPr2)2N]2 is shown to deposit cadmium selenide and/or cadmium phosphide on glass substrates, depending upon the growth conditions. The phase, structure, morphology and composition of the films were characterised by X-ray powder diffraction (XRD), scanning electron microscopy, energy dispersive X-ray analysis and X-ray photoelectron s...

1 Thin film specifications continue to push the envelope of manufacturing capabilities. Many advanced commercial and military applications require ultra low loss films that are extremely difficult to deposit using conventional Electron beam or Ion Assisted Deposition (IAD) technology. Ring Laser Gyroscope (RLG) mirrors for instance require high packing density, minimal defects, and negligible a...

Rugate designs for the realization of notch filters are well known in the literature. The required deposition of gradient index layers is difficult to manufacture. In our approach we apply the equivalent index theory to replace the gradient index profile of a notch filter design. We produce single and multiple notch filters with plasma ion-assisted deposition and broad-band optical monitoring. ...

Tantalum oxide is a compound with attractive properties and important applications in optoelectronis. It has a high refractive index and a good thermal and chemical stability. Tantalum oxide thin layers have been deposited by laser ablationpulsed laser deposition (PLD) and radiofrequency assisted pulsed laser ablation (RF-PLD) starting from a Tantalum metallic target in oxygen atmosphere. In th...

Small-angle X-ray scattering (SAXS) was performed on single-crystal chemical vapor deposition (CVD) diamonds with low nitrogen concentrations, which were fabricated by microwave plasma-assisted chemical vapor deposition at high growth rates. High optical quality undoped 500 µm-thick single-crystal CVD diamonds grown without intentional nitrogen addition proved to be excellent as windows on SAXS...

Homoepitaxial Si films have been deposited at a high rate of 200 nm s-1 over a wide area of 20 mm × 80 mm by cluster-assisted mesoplasma chemical vapor deposition (MPCVD) on a moving substrate. The obtained epitaxial Si films exhibited a uniform roughness of 0.1-0.3 nm (1 × 1 μm2) and a Hall mobility of ∼240 cm2 V-1 s-1. The results suggested that under the MPCVD the deposition precursors forme...

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We present a new process to get in-situ-growth carbon nanotubes (CNTs) array device with good FE properties by CO2-assisted thermal chemical vapor deposition (CVD). Field Emission measurement shows that introducing CO2 into CNTs growth system leads to a significant enhancement in the emission properties, both the turn-on field and threshold field decrease. Raman, SEM and TEM investigation resul...

We fabricate a nonlinear optical device based on a fiber pigtail cross-section coated with a single-layer graphene grown by chemical vapor deposition (CVD) method. Using the fabricated graphene-assisted nonlinear optical device and employing Nyquist 16-ary quadrature amplitude modulation (16-QAM) signal, we experimentally demonstrate phase conjugated wavelength conversion by degenerate four-wav...