نتایج جستجو برای: band inversion

تعداد نتایج: 177179  

Journal: :Electronics 2023

This paper presents the implementation of Bayesian inversion method for characterization and estimation different dielectric material properties. The scattering parameters single multi-layer materials are measured using a free-space experimental setup standard gain horn antenna Vector Network Analyzer (VNA) at Ka-band (26–40 GHz). relative permittivity, thickness, positioning error defined as m...

2014
Ming Yang Wu-Ming Liu

Skutterudites, a class of materials with cage-like crystal structure which have received considerable research interest in recent years, are the breeding ground of several unusual phenomena such as heavy fermion superconductivity, exciton-mediated superconducting state and Weyl fermions. Here, we predict a new topological insulator in bismuth-based skutterudites, in which the bands involved in ...

2009
Frank Silvio Marzano Saverio Mori Nazzareno Pierdicca Luca Pulvirenti James A. Weinman

Space-borne X-band synthetic aperture radars (SARs) provide a unique opportunity to measure rainfall over land with unsurpassed spatial resolution of about few hundred meters. This work explores the potential of space-borne X-SARs to estimate rainfall over land from both a model and retrieval point of view. The main objective is to provide a framework for a physically-based inversion of SARs me...

2014
Q. D. Gibson D. Evtushinsky A. N. Yaresko V. B. Zabolotnyy Mazhar N. Ali M. K. Fuccillo J. Van den Brink B. Büchner R. J. Cava S. V. Borisenko

We present an ARPES study of the surface states of Ru2Sn3, a new type of a strong 3D topological insulator (TI). In contrast to currently known 3D TIs, which display two-dimensional Dirac cones with linear isotropic dispersions crossing through one point in the surface Brillouin Zone (SBZ), the surface states on Ru2Sn3 are highly anisotropic, displaying an almost flat dispersion along certain h...

Journal: :Scientific reports 2015
Yaozhuang Nie Mavlanjan Rahman Daowei Wang Can Wang Guanghua Guo

We present first-principles calculations of electronic structures of a class of two-dimensional (2D) honeycomb structures of group-V binary compounds. Our results show these new 2D materials are stable semiconductors with direct or indirect band gaps. The band gap can be tuned by applying lattice strain. During their stretchable regime, they all exhibit metal-indirect gap semiconductor-direct g...

2006
Jack Xin Yingyong Qi

A many to one discrete auditory transform is presented to map a sound signal to a perceptually meaningful spectrum on the scale of human auditory filter band widths (critical bands). A generalized inverse is constructed in closed analytical form, preserving the band energy and band signal to noise ratio of the input sound signal. The forward and inverse transforms can be implemented in real tim...

2009
Jinyang Du Jiancheng Shi

Active microwave sensors, especially high-frequency radar systems, are highly sensitive to snow pack parameters, including Snow Water Equivalent (SWE), which is a crucial parameter in the studies of hydrology and climatology. For example, studies using Ku-band observations from scatterometer QuickSCAT and POLSCAT have shown significant radar backscattering responses on SWE variations. It has be...

2016
Sung-Ping Chen Zhi-Quan Huang Christian P. Crisostomo Chia-Hsiu Hsu Feng-Chuan Chuang Hsin Lin Arun Bansil

Using first-principles electronic structure calculations, we predict half-fluorinated GaBi honeycomb under tensile strain to harbor a quantum anomalous Hall (QAH) insulator phase. We show that this QAH phase is driven by a single inversion in the band structure at the Γ point. Moreover, we have computed the electronic spectrum of a half-fluorinated GaBi nanoribbon with zigzag edges, which shows...

2003
S. V. Shulga

We calculate the tunneling density of states (DOS) of MgB2 for different tunneling directions, by directly solving the real-axis, two-band Eliashberg equations (EE). Then we show that the numeric inversion of the standard singleband EE, if applied to the DOS of the two-band superconductor MgB2, may lead to wrong estimates of the strength of certain phonon branches (e.g. the E2g) in the extracte...

2001
M J Sparnaay

The temperature dependence of the conductance of an n-type inversion layer on a (100) silicon surface has been examined between 1.4 K and 4.2K at electron densities at which the Fermi level is close above the mobility edge of the lowest sub-band. It can be explained by assuming a separate band of localised bound states from which electrons are thermally excited into the extended states of the s...

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