Articles you may be interested in Proton irradiation of InAs/AlSb/GaSb resonant interband tunneling diodes Appl. Quantization effect on capacitancevoltage and currentvoltage characteristics of an InAs/AlSb/GaSb interband tunneling diode InAs/AlSb/GaSb singlebarrier interband tunneling diodes with high peaktovalley ratios at room temperature The dependence of the interband tunneling current on A...

The effect of uniaxial-strain, band-structure, mobility, effective masses, density of states, channel orientation and highfield transport on the drive current, off-state leakage and switching delay in nano-scale, Silicon (Si) and Germanium (Ge), pMOS DGFETs is thoroughly and systematically investigated. To accurately model and capture all these complex effects, different simulation techniques, ...

We demonstrate that bulk band structure can have a strong influence in scanning tunneling microscopy measurements by resolving electronic interference patterns associated with scattering phenomena of bulk states at a metal surface and reconstructing the bulk band topology. Our data reveal that bulk information can be detected because states at the edge of the surface-projected bulk band have a ...

Due to emergence of serious obstacles by scaling of the transistors dimensions, it has been obviously proved that silicon technology should be replaced by a new one having a high ability to overcome the barriers of scaling to nanometer regime. Among various candidates, carbon nanotube (CNT) field effect transistors are introduced as the most promising devices for substituting the silicon-based ...

We convert calculations of the bound-to-continuum absorption in type-II semiconductor quantum wells into an equivalent source-radiation problem under the effective-mass approximation with band mixing. Perfectly matched layers corresponding to the eight-band Luttinger-Kohn Hamiltonian are introduced to incorporate the effect of quasi-bound states in open regions. In this way, the interplay betwe...

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The present work intends to explain why ultrathin Al2O3 atomic-layer-deposited (ALD) on the back contact with rectification and tunneling effects can significantly improve the performance of CdTe solar cells in our previous work [ Liang , J. ; et al. Appl. Phys. Lett. 2015 , 107 , 013907 ]. Herein, we further study the mechanism through establishing the interfacial energy band diagram configura...

A theoretical model for quasiparticle and Josephson tunneling in multiband superconductors is developed and applied to MgB2-based junctions. The gap functions in different bands in MgB2 are obtained from an extended Eliashberg formalism, using the results of band structure calculations. The temperature and angle dependencies of MgB2 tunneling spectra and the Josephson critical current are calcu...

Scanning tunneling microscopy and spectroscopy has been used to study the electronic states of oxidized 6H-SiC interfaces. The SiC surfaces were oxidized by annealing in an ultra-high vacuum chamber at 600−800oC under 1×10 Torr pressure of molecular oxygen. Tunneling spectra revealed two dominant states at –1.8 and 1.5 eV relative to the Fermi level, which lie outside the band gap region but ar...

For heterojunction solar cells with a spike in one of the bands at the junction, intra-band tunneling will enhance the current through the interface. We have incorporated this phenomenon in SCAPS, a publicly available one-dimensional solar cell device simulator. The thermionic-field emission boundary conditions at the interfaces are formulated based on the WKB approximation and we discuss the c...