Through introducing a probe layer of bis(4,6-difluorophenylpyridinato-N,C2)picolinatoiridium (FIrpic) between QD emission layer and 4, 4-N, N- dicarbazole-biphenyl (CBP) hole transport layer, we successfully demonstrate that the electroluminescence (EL) mechanism of the inverted quantum dot light-emitting diodes (QD-LEDs) with a ZnO nanoparticle electron injection/transport layer should be dire...

Successful synthesis of the phenylisopropyl hexagermane (Chem. Commun. 2013, 49, 8380) offers an exciting opportunity to synthesize a new class of low-dimensional germanium compounds with novel optical and electronic properties. Using the phenylisopropyl hexagermane as a model template, we have performed an ab initio study of electronic properties of polygermanes. Our density functional theory ...

Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy" The structural and optical properties of lattice-matched InAs 0.911 Sb 0.089 bulk layers and strain-balanced InAs/InAs 1Àx Sb x (x $ 0.1–0.4) superlattices grown on (100)-oriented GaSb substrates by molecular beam epitaxy are examined using X-ray diffract...

We demonstrate a 158 fs 5.3 nJ mode-locked laser system based on a fiber oscillator, fiber amplifier and fiber compressor. Dispersion compensation in the fiber oscillator was obtained with a solid-core photonic bandgap (SC-PBG) fiber spliced to standard fibers, and external compression is obtained with a hollow-core photonic bandgap (HC-PBG) fiber.

Experiments demonstrate a dramatic decrease in polarization-instability threshold as an optical pulse is tuned near the short-wavelength edge of the photonic bandgap formed by a fiber Bragg grating. These enhanced nonlinear interactions and birefringent effects are modeled with coupled-mode numerical simulations. Nonlinearities are shown to increase much more rapidly than the effective birefrin...

We use a Monte Carlo approach to investigate the electron transport in Indium Nitride. Simulations with two different setups (one with a bandgap of 1.89 eV and one with bandgap of 0.69 eV) are conducted. All relevant scattering mechanisms are accounted for. Results for electron mobility as a function of free carrier concentration and electric field are compared to previous studies and discussed.

ZnSn1-x Gex N2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar-energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN2 ) to 3.1 eV (ZnGeN2 ) by control of the Sn/Ge ratio.

We show that ominidirectional reflection is not a sufficient signature of a photonic bandgap. Although dramatic angular redistribution takes place, the mode density of the electromagnetic field is hardly altered within the ominidirectional reflection range but rather has characteristics typical of a waveguide. The strikingly large polarization anisotropy is due to the huge dielectric contrast b...

A comprehensive study of the effect of tensile strain (ε = 0% to 8%) on the electronic structures of two-dimensional (2D) transition-metal trichalcogenide (TMTC) monolayers MX3 (M = Ti, Zr, Hf, Nb; X = S, Se Te) is performed on the basis of density functional theory (DFT) computation. The unstrained TiS3, ZrS3, ZrSe3, HfS3, HfSe3 and NbS3 monolayers are predicted to be semiconductors with their...

Modification of graphene to open a robust gap in its electronic spectrum is essential for its use in field effect transistors and photochemistry applications. Inspired by recent experimental success in the preparation of homogeneous alloys of graphene and boron nitride (BN), we consider here engineering the electronic structure and bandgap of C2xB1-xN1-x alloys via both compositional and config...