New copper plating bath chemisties are being developed to meet the emerging need of plating copper into submicron features on semiconductor wafers. These chemistries are designed to provide a fast, efficient, fill for even the most challenging wafer terrain. It has been found that maintaining the concentration of the additives in these plating baths at certain levels is critical to the performa...

The Ni4S3 thin films were prepared by chemical bath deposition method. The chemical bath contained nickel sulphate and sodium thiosulfate which supplied the Ni and S ions, respectively. The structure and morphology of the films were studied using X-ray diffraction and atomic force microscopy technique, respectively. Absorbance spectra data of the films were obtained by UV-Vis spectrophotometer....

This paper is dedicated to study the thin polycrystalline films of semiconductor chalcogenide materials (CdS, CdSe, and PbS) obtained by ammonia-free chemical bath deposition. The obtained material is of polycrystalline nature with crystallite of a size that, from a general point of view, should not result in any noticeable quantum confinement. Nevertheless, we were able to observe blueshift of...

CdS/CdSe quantum dots co-sensitized TiO2 solar cell was prepared by combining the successive ion layer absorption and reaction (SILAR) method and chemical bath deposition (CBD) method for the fabrication of CdS and CdSe quantum dots, respectively. The effect of CdSe deposition time on the solar cell performance was investigated. It was found that the optimized deposition time for CdSe was 3 h, ...

In this study, the (Lead Sulfide) PbS thin films with one, two, and three layers were fabricated by employing chemical bath deposition method. Layer layer production of was realized for first time as seen in literature review. For investigating crystal structures, X-ray diffraction (XRD) analysis used. The structural analyses indicated that crystallite size decreased from about 40 nm to 8-10 de...