germanium nanowires (genws) were synthesized using chemical vapor deposition (cvd) based on vapor–liquid–solid (vls) mechanism with au nanoparticles as catalyst and germanium tetrachloride (gecl4) as a precursor of germanium. au catalysts were deposited on silicon wafer as a thin film, firstly by sputtering technique and secondly by submerging the silicon substrates in au colloidal solution, wh...

Chemical vapour deposition enables the polymerisation of N -unsubstituted diketopyrrolopyrrole derivative into polymer thin film combining H-bonding and conjugated covalent bonds, increasing conductivity lifetime electronically excited states.

Germanium nanowires (GeNWs) were synthesized using chemical vapor deposition (CVD) based on vapor–liquid–solid (VLS) mechanism with Au nanoparticles as catalyst and germanium tetrachloride (GeCl4) as a precursor of germanium. Au catalysts were deposited on silicon wafer as a thin film, firstly by sputtering technique and secondly by submerging the silicon substrates in Au colloidal s...

Micropatterning of surfaces with varying chemical, physical and topographical properties usually requires a number of fabrication steps. Herein, we describe a micropatterning technique based on plasma enhanced chemical vapour deposition (PECVD) that deposits both protein resistant and protein repellent surface chemistries in a single step. The resulting multifunctional, selective surface chemis...

The effect of thickness of the high-temperature (HT) AlN buffer layer on the properties of GaN grown on Si(1 1 1) has been investigated. Optical microscopy (OM), atomic force microscopy (AFM) and X-ray diffraction (XRD) are employed to characterize these samples grown by metal-organic chemical vapor deposition (MOCVD). The results demonstrate that the morphology and crystalline properties of th...

GaN films were grown on (100) GaAs substrates by metalorganic chemical vapor deposition and were found to be of (200) cubic or (111) cubit/(0002) hexagonal phase. Their photoluminescence characteristics remained invariant with material phase. We report assignment of band-edge photoluminescence near 3!36 eV and 3.15-3.31 eV in apparently cubic GaN to intrinsic/bound excitons and phonon-assisted,...

A direct and metal layer-free growth of flat graphene pads on exfoliated hexagonal boron nitride substrate (h-BN) are demonstrated by atmospheric chemical vapour deposition (CVD) process. Round shape with high flatness graphene pads are grown in high yield (∼95%) with a pad thickness of ∼0.5 nm and homogenous diameter.

Conductive agent incorporating Si anodes consisting of directly grown carbon nanotubes on hard carbon encapsulating Si nanoparticles were prepared by a one-pot chemical vapour deposition process. Owing to this fabulous structure, Si-based anodes exhibit excellent cycle retention and rate capability with a high-mass-loading of 3.5 mg cm(-2).