In this thesis, the applicability of Class-D amplifiers to integrated wide-band communication line driver applications is studied. While Class-D techniques can address some of the efficiency limitations of linear amplifier structures and have shown promising results in low frequency applications, the low frequency techniques and knowledge need further development in order to improve their pract...

eGaN FETs have repeatedly demonstrated higher efficiency than MOSFETs in wireless power transfer amplifiers when operated over a wide impedance range using a ZVS Class D amplifier [1, 2, 3, 4, 5, 6, 7, and 8]. In this article we examine a method to further improve the performance of eGaN FETs by replacing the bootstrap diode of the high side gate driver with an eGaN FET that is driven synchrono...