نتایج جستجو برای: class e power amplifier

تعداد نتایج: 1849008  

2013
A. Martin D. Sardin T. Reveyrand P. Bouysse L. Lapierre J. F. Villemazet

Due to the high increase in and demand for a wide assortment of applications that require low-cost, high-efficiency, and compact systems, RF power amplifiers are considered the most critical design blocks and power consuming components in wireless communication, TV transmission, radar, and RF heating. Therefore, much research has been carried out in order to improve the performance of power amp...

2010
Tian He Uma Balaji

A Class F power amplifier (PA) at 2.5GHz has been designed and fabricated. Test results show 15.7 dB gain with 75.75% power added efficiency (PAE ), at an input level of 25 dBm. The design procedure is presented, with various issues illustrated and addressed. A new method is proposed to obtain the optimum load and source impedances without iterations, which would usually be necessary.

2016
Mr. P. Ramu G. VR. Sakthivel

The comparator is designed in pipelined ADC. FINFET is the technology which performs the dual gate MOSFET. This thesis focuses on the high-speed design of pipelined ADC. In the meanwhile, we try to minimize the power dissipation as well. In this thesis, A semidigital Gm-based amplifier is proposed for a low-power pipelined analog-to-digital converter (ADC )in HSPICE .And also we compare the pow...

Journal: :IEICE Electronic Express 2017
Xiansuo Liu Chuicai Rong Yuehang Xu Bo Yan Ruimin Xu Tiedi Zhang

In this paper, a scalable large signal GaN HEMT model including nonlinear thermal sub-circuit is described. Only two scalable parameters are needed in the Ids scalable model by introducing a simple correction factor. The established model can predict the I–V curves at different-in-size AlGaN/GaN HEMTs devices accurately. Small signal S-parameters and large signal load pull tests with on-wafer m...

Journal: :IEICE Transactions 2005
Kiyoshi Aikawa Kazuhiko Honjo

0 1 5 Frequency [GHz] 6 2 3 4 Abstract The validity of lumped element microwave class-F amplifier circuit design has been demonstrated experimentally. By means of the proposed class-F amplifier design method, more than 4th-order higher harmonic frequencies can be taken into account in class-F microwave amplifier design using only lumped element components. In this approach, miniaturization of c...

2003
Dusan M. Milosevic Johan van der Tang Arthur H. M. van Roermund

This paper investigates the feasibility of the application of class E RF power amplifiers in UMTS. A typical class E circuit has been designed and simulated, in conjunction with a linearization scheme based on the EER principle. The EER testbench uses ideal building blocks, since the emphasis is on the operation of the amplifier itself. Three different technologies have been used for the active...

2009
Joanna Liu C. Wu Martin P. Mintchev

This study models a transcutaneous energy transmission system which can supply DC power to an implanted device without an external battery. The goals of the study are to: (1) develop a model to describe the transcutaneous energy transmission system; and (2) use the developed model to design a transcutaneous energy transmission system for an implantable gastrointestinal neurostimulator. The comp...

Journal: :The Journal of Korean Institute of Electromagnetic Engineering and Science 2013

A two stage sub-µW Inverter-based switched-capacitor amplifier-filter is presented which is capable of amplifying both spikes and local field potentials (LFP) signals. Here we employ a switched capacitor technique for frequency tuning and reducing of 1/f noise of two stages. The reduction of power consumption is very necessary for neural recording devices however, in switched capacitor (SC) cir...

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