We have developed an integrated circuit for in situ monitoring and characterization of CMOS post-process micromachining. In our demonstration, the circuit provides automated readout of N-well resistors surrounding each of 140 micromachining test structures at up to 14,000 samples per second per device during the post-process silicon etch. We use this circuit to examine the effect of pit size, s...

Abstract CMOS processes that have been developed primarily for logic are now increasingly used for analog and mixed signal applications. Process restrictions, wide parametric variance, and noisy application environments lead to special efforts in circuit design/architecture, layout techniques, and optimizing the use of a limited process. This paper addresses a combination of techniques that pro...

Custom design of integrated circuits is required for the development of digital standard-cell and bit-slice libraries, analog circuits, and other specialized circuits that are not commercially available. Teaching students the design and verification flow at this physical level is valuable in that it provides the understanding and skills they will need to perform these functions in their subsequ...

A precision CMOS voltage reference circuit is very important for the design of the stable voltage down converter of the high density VLSIs. By using the active mode operation of the component MOS transistors a CMOS bandgap type reference voltage circuit was redesigned for the enhancement of the circuit stability against the internal noises. The voltage supply independence, temperature independe...

Carbon Nanotube Field Effect Transistor (CNFET) is a promising new technology that overcomes several limitations of traditional silicon integrated circuit technology. In recent years, the potential of CNFET for analog circuit applications has been explored. This paper proposes a novel four quadrant analog multiplier design using CNFETs. The simulation based on 32nm CNFET technology shows that t...

We propose a CMOS circuit that can be used as an equivalent to resistors. This circuit uses a simple differential pair with diodeconnected MOSFETs and operates as a high-resistance resistor when driven in the subthreshold region of MOSFETs. Its resistance can be controlled in a range of 1–1000 MΩ by adjusting a tail current for the differential pair. The results of device fabrication with a 0.3...