The commonly used partial differential equations for point defect diffusion are reviewed. Special attention is given to the initial conditions of the point defect concentrations. Our numerical simulations clearly show that the assumption of initially equidistributed point defect concentrations at process temperature is justified only for a very special choice of parameters. A more general treat...

We report experiments on defect-tracking in the state of undulation chaos observed in thermal convection of an inclined fluid layer. We characterize the ensemble of defect trajectories according to their velocities, relative positions, diffusion, and gain and loss rates. In particular, the defects exhibit incidents of rapid transverse motion which result in power law distributions for a number ...

This is the first case report of a superior segmental optic hypoplasia (SSOH) combined with normal-tension glaucoma accompanied by a progressive glaucomatous visual field defect. A 40-year-old man, incidentally diagnosed as having bilateral SSOH, had disc hemorrhage associated with expansion of the width of a retinal nerve fiber layer defect and deterioration of a visual field defect in the rig...

In this work we describe an approach of using physical design and test failure knowledge to localize defects in random logic. We term this approach computer-aided fault to defect mapping (CAFDM). An integrated tool has been developed on top of an existing commercial ATPG tool. CAFDM was able to correctly identify the defect location and layer in all 9 of the chips that had bridging faults injec...

The interplane spin cross relaxation time Tx measured by high frequency ESR in X-ray irradiated κ-(BEDT-TTF)2Cu[N(CN)2]Cl is compared to the interplane resisitivity ρ⊥ and the in-plane resistivity ρ‖ between 50 K and 250 K. The irradiation transforms the semiconductor behavior of the non-irradiated crystal into metallic. Irradiation decreases Tx, ρ⊥ and ρ‖ but the ratio Tx/ρ⊥ and ρ⊥/ρ‖ remain u...

The propagation of longitudinal acoustic waves in multilayer structures based on porous silicon and the experimental measurement of acoustic transmission for the structures in the gigahertz range are reported and studied theoretically. The considered structures exhibit band gaps in the transmission spectrum and these are localized modes inside the band gap, coming from defect layers introduced ...

At the 28nm technology node and below, hot spot prediction and process window control across production wafers have become increasingly critical. We establish proof of concept for ASML’s holistic lithography hot spot detection and defect monitoring flow, process window optimizer (PWO), for a 28nm metal layer process. We demonstrate prediction and verification of defect occurenceon wafer that ar...